Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
c
c
CEP20P06/CEB20P06
Tc = 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= -14A
V
DS
= -30V, I
D
=-3.7A,
V
GS
= -10V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -48V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10 V, I
D
= -9A
V
GS
= -4.5V, I
D
= -7A
-1
105
140
615
140
45
11
4.5
50
15
17
2
4
-14
-2
22
9
100
30
22
Min
-60
-1
100
-100
-3
125
175
Typ
Max
Units
V
µA
nA
nA
V
m
Ω
m
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
V
DS
= -30V, V
GS
= 0V,
f = 1.0 MHz
V
DD
= -30V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
Embedded System
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