ZXMN3A01E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
V
(BR)DSS
30V
R
DS(ON) Max
0.12Ω @ V
GS
= 10V
0.18Ω @ V
GS
= 4.5V
I
D
T
A
= +25°
C
3.0A
2.5A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SOT26
D
1
D
2
G
3
Top View
6
5
4
D
D
S
Equivalent Circuit
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
ZXMN3A01E6TA
Notes:
Case
SOT26
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
3A1 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
3A1
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
YM
2017
E
Apr
4
May
5
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527 Rev. 5 - 2
1 of 7
www.diodes.com
ZXMN3A01E6
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GSS
Steady
State
T
A
= +25° (Note 6)
C
T
A
= +70° (Note 6)
C
T
A
= +25° (Note 5)
C
I
D
I
S
I
DM
I
SM
Value
30
±20
3.0
2.4
2.4
2.4
10
10
Units
V
V
A
A
A
A
ADVANCE INFORMATION
ADVANCED INFORMATION
Gate-Source Voltage
Continuous Drain Current, V
GS
= 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Pulsed Source Current (Note 7)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
A
= +25° (Note 5)
C
T
A
= +25° (Note 6)
C
Steady State (Note 5)
Steady State (Note 6)
Symbol
P
D
P
D
R
θJA
T
J,
T
STG
Value
1.1
8.8
1.7
13.6
113
70
-55 to +150
Units
W
mW/°
C
W
mW/°
C
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Diode Forward Voltage (Note 8)
Forward Transconductance (Notes 8 & 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 5.0V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
g
fs
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
1.0
Typ
0.106
0.84
3.5
190
38
20
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
17.7
13.0
Max
0.5
100
0.12
0.18
0.95
Unit
V
µA
nA
V
Ω
V
S
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
V
GS
= 0V, I
S
= 1.7A
V
DS
= 4.5V, I
D
= 2.5A
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
nC
V
DS
= 15V, I
D
= 2.5A
ns
V
GS
= 10V, V
DD
= 15V, R
G
= 6.0Ω,
I
D
= 2.5A
ns
nC
I
F
= 2.5A, dI/dt = 100A/μs
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
5
secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
ZXMN3A01E6
Document number: DS33527 Rev. 5 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
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