MC74VHC1G04
Single Inverter
The MC74VHC1G04 is an advanced high speed CMOS inverter
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74VHC1G04 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G04 to be used to interface 5 V circuits to 3 V
circuits.
Features
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MARKING
DIAGRAMS
5
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
V5 M
G
G
M
•
•
•
•
•
•
•
High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
1
Chip Complexity: FETs = 105
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
5
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
V5
M
G
V5 M
G
G
1
= Device Code
= Date Code*
= Pb−Free Package
NC
1
5
V
CC
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
IN A
2
GND
3
4
OUT Y
PIN ASSIGNMENT
1
2
3
4
5
NC
IN A
GND
OUT Y
V
CC
Figure 1. Pinout
(Top View)
IN A
1
OUT Y
FUNCTION TABLE
Figure 2. Logic Symbol
A Input
L
H
Y Output
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 16
1
Publication Order Number:
MC74VHC1G04/D
MC74VHC1G04
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A (Note 1)
TSOP−5
SC70−5/SC−88A
TSOP−5
Parameter
Value
*0.5
to
)7.0
−0.5
to +7.0
*0.5
to V
CC
)0.5
−20
±20
±12.5
±25
*65
to
)150
260
)150
350
230
150
200
Level 1
UL 94 V−0 @ 0.125 in
u2000
u200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
Latchup
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Characteristics
Min
2.0
0.0
0.0
−55
0
0
Max
5.5
5.5
V
CC
+125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
NORMALIZED FAILURE RATE
Junction
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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MC74VHC1G04
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= V
IH
or V
IL
I
OH
=
*50
mA
V
IN
= V
IH
or V
IL
I
OH
=
*4
mA
I
OH
=
*8
mA
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
2.0
3.0
4.5
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
T
A
= 255C
Typ
Max
T
A
v
855C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±1.0
40
mA
mA
V
Max
*555C
to 1255C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
Max
Unit
V
V
IL
Maximum Low−Level
Input Voltage
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
Î Î Î Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
Input t
r
= t
f
= 3.0 ns
Symbol
t
PLH
,
t
PHL
Parameter
Test Conditions
T
A
= 25°C
Typ
4.5
6.4
3.5
4.5
4
T
A
≤
85°C
−55
≤
T
A
≤
125°C
Min
Max
10.0
14.5
Min
Max
Min
Max
Unit
ns
Maximum
Propagation Delay,
Input A to Y
V
CC
= 3.3
±
0.3 V C
L
= 15 pF
C
L
= 50 pF
V
CC
= 5.0
±
0.5 V C
L
= 15 pF
C
L
= 50 pF
7.1
10.6
5.5
7.5
10
8.5
12.0
6.5
8.5
10
8.0
10.0
10
C
IN
Maximum Input
Capacitance
pF
Typical @ 25°C, V
CC
= 5.0 V
8.0
C
PD
Power Dissipation Capacitance (Note 6)
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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3
MC74VHC1G04
A or B
V
CC
50%
GND
t
PLH
Y
50% V
CC
t
PHL
Figure 4. Switching Waveforms
INPUT
C
L*
OUTPUT
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
MC74VHC1G04DFT1G
NLVVHC1G04DFT1G*
MC74VHC1G04DFT2G
NLVVHC1G04DFT2G*
MC74VHC1G04DTT1G
SOT23−5 / TSSOP−5 / SC59−5
(Pb−Free)
SC70−5 / SC−88A / SOT−353
(Pb−Free)
Package
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74VHC1G04
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
---
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
---
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
5
4
S
1
2
3
−B−
D
5 PL
0.2 (0.008)
M
B
M
N
J
C
DIM
A
B
C
D
G
H
J
K
N
S
H
K
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
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