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BUR23

Description
Power Bipolar Transistor, 30A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size38KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

BUR23 Overview

Power Bipolar Transistor, 30A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

BUR23 Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
Collector-emitter maximum voltage325 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment250 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
VCEsat-Max1.5 V
This Material Copyrighted By Its Respective Manufacturer
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