ZXTN19100CFF
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT23F
Features
BV
CEO
> 100V
BV
CEX
> 200V
BV
ECO
> 5V
I
C
= 4.5A Continuous Collector Current
Low Saturation Voltage V
CE(SAT)
< 60mV @ 1A
R
CE(SAT)
= 38mΩ
h
FE
Characterised Up to 5A
1.5W Power Dissipation
Complementary PNP Type: ZXTP19100CFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23F
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Applications
Line Switching
Motor Driving (Including DC Fans)
High-Side Switches
Subscriber Line Interface Cards (SLIC)
Description
Advanced process capability has been used to maximise the
performance of this transistor. The SOT23F package is pin
compatible with the industry standard SOT23 footprint but offers
lower profile and higher dissipation for applications where power
density is of utmost importance.
SOT23F
C
E
B
C
B
E
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
ZXTN19100CFFTA
Notes:
Compliance
AEC-Q101
Marking
1E5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23F
1E5 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
1E5
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
YW
1 of 7
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January 2016
© Diodes Incorporated
ZXTN19100CFF
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Value
200
200
100
5
7
4.5
6
1
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
W
mW/°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°
C/W
°
C/W
°
C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
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January 2016
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ZXTN19100CFF
Thermal Characteristics and Derating Information
1m
I
C
Collector Current (A)
I
C
Collector Current (A)
10
V
CE(sat)
Limited
50mmx50mm FR4, 2oz Cu
100μ
µ
BV
(BR)CEO
=100V
Failure may occur
in this region
1
DC
1s
100ms
Single Pulse
O
T
amb
=25 C
10ms
1ms
100
s
10μ
µ
100m
1μ
µ
T
amb
=25 C
O
BV
(BR)CEX
=200V
10m
100m
1
10
100
0
25
50
75
100 125 150 175 200
V
CE
Collector-Emitter Voltage (V)
V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
Thermal Resistance ( C/W)
80
70
60
50
40
30
20
10
0
µ
100μ 1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.5
Safe Operating Area
50mmx50mm FR4, 2oz Cu
Maximum Power (W)
T
amb
=25 C
O
100
O
Single Pulse
T
amb
=25 C
50mmx50mm FR4,
2oz Cu
O
10
1
10
100
1k
1
100μ 1m
µ
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
O
25mmx25mm FR4, 2oz Cu
50mmx50mm FR4, 2oz Cu
Pulse Power Dissipation
15mmx15mm FR4, 1oz Cu
Temperature ( C)
Derating Curve
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
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January 2016
© Diodes Incorporated
ZXTN19100CFF
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Forward Blocking)
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Base Open)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS
(Note 11)
Static Forward Current Transfer Ratio
Symbol
BV
CBO
BV
CEX
BV
CEO
BV
EBO
BV
ECX
BV
ECO
I
CBO
I
EBO
Min
200
200
100
7
6
5
—
—
200
130
—
Typ
240
240
120
8.3
8.3
8
<1
—
Max
—
—
—
—
—
—
50
20
50
500
—
—
Unit
V
V
V
V
V
V
nA
µA
nA
Test Condition
I
C
= 100µA
I
C
= 100µA, R
BE
< 1k or
-1V < V
BE
< 0.25V
I
C
= 10mA
I
E
= 100µA
I
E
= 100µA, R
BC
< 1k or
0.25V < V
BC
< -0.25V
I
E
= 100µA
V
CB
= 160V
V
CB
= 160V, T
A
= +100°
C
V
EB
= 5.6V
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 20mA
I
C
= 4.5A, I
B
= 450mA
I
C
= 4.5A, I
B
= 450mA
I
C
= 4.5A, V
CE
= 2V
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V,
I
C
= 500mA,
I
B1
= I
B2
= 50mA
<1
350
250
25
45
105
170
950
880
150
305
15.7
28.3
23.6
962
133
h
FE
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
IBO
C
OBO
t
D
t
R
t
S
t
F
—
—
—
—
—
—
—
—
—
—
60
135
235
1050
1000
—
—
25
—
—
—
—
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
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January 2016
© Diodes Incorporated
ZXTN19100CFF
Typical Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
1
Tamb=25 C
I
C
/I
B
=100
O
1.0
I
C
/I
B
=10
150 C
O
V
CE(SAT)
(V)
100m
I
C
/I
B
=50
V
CE(SAT)
(V)
0.5
100 C
O
I
C
/I
B
=20
I
C
/I
B
=10
25 C
O
10m
1m
10m
100m
-55 C
O
1
10
0.0
10m
100m
1
10
I
C
Collector Current (A)
V
CE(SAT)
v I
C
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
1.4
150 C
O
V
CE
=2V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
V
BE(SAT)
(V)
100 C
O
O
25 C
-55 C
O
650
600
550
500
450
400
350
300
250
200
150
100
50
0
1.2
I
C
/I
B
=10
Typical Gain (h
FE
)
1.0
25 C
O
-55 C
O
Normalised Gain
0.8
0.6
150 C
O
0.4
0.2
1m
100 C
O
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
V
BE(SAT)
v I
C
1.2
V
CE
=2V
1.0
-55 C
25 C
O
O
V
BE(ON)
(V)
0.8
0.6
100 C
O
0.4
150 C
O
0.2
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
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