BAT750
Surface Mount Schottky Barrier Rectifier
* We declare that the material of product compliance with RoHS requirements.
3
1
2
P b
Lead(Pb)-Free
* Very Low Forward Voltage Drop
* High Conductance
* For Use in DC-DC Converter, PCMCIA,
and Mobile Telecommunications Applications
SOT-23
TOP VIEW
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
Power Dissipation
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
d
T
j
T
STG
Value
40
28
0.75
5.5
350
+125
-55 to +125
Unit
V
V
A
A
mW
°C
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
I
R
= 300µA
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA
100mA
250mA
500mA
750mA
1000mA
1500mA
Symbol
V
(BR)R
Min
40
Typ
-
Max
-
280
310
350
420
490
540
650
100
175
25
Unit
V
Forward Voltage
V
F
-
-
mV
Reverse Current
Total Capacitance
V
R
= 30V
V
R
= 0V, f = 1.0MHz
V
R
= 25V, f = 1.0MHz
I
R
C
T
-
-
-
-
-
-
µA
pF
WEITRON
http://www.weitron.com.tw
1/3
08-Apr-08
BAT750
1.0
I
O
, AVERAGE RECTIFIED CURRENT (A)
0.75
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
1
0.50
0.1
0.25
0
0
25
50
75
100
125
150
0.01
0
0.2
0.4
0.6
0.8
1.0
T
L
, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
f = 1MHz
150
T
A
, AMBIENT TEMPERATURE (ºC)
C
T
, TOTAL CAPACITANCE (pF)
125
100
100
75
10
50
1
25
0
5
10
15
20
25
30
35
40
1
10
20
30 40 50
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs Reverse Voltage
Note: 1.
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Safe Operating Area
Assumed application thermal conditions. R
θJA
varies
depending on application.
WEITRON
http://www.weitron.com.tw
2/3
08-Apr-08
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