BC807-16W
BC807-25W
BC807-40W
General Purpose Transistor
PNP Silicon
P b
Lead(Pb)-Free
1
BASE
COLLECTOR
3
3
1
2
2
EMITTER
SOT-323(SC-70)
MaximumRatings
(T
A
=25°Cunless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation FR-5 Board
(1)
T
A
=25°C
Thermal Resistance, Junctionto Ambient
(1)
Junction Temperature Range
Storage Temperature Range
V
CEO
V
CBO
V
EBO
I
C
P
D
R
θJA
T
J
Tstg
-45
-50
-5.0
500
150
833
-55 to +150
-55 to +150
V
V
V
m
A
mW
°C/W
°C
°C
Device Marking
BC807-16W = 5A , BC807-25W = 5B , BC807-40W =
1. FR-5 = 1.0 x 0.75 x 0.062 in.
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BC807-16W
BC807-25W
BC807-40W
WEITRON
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
(T
A
=25ºC Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage
I
C
=-10mA
Collector-Base Breakdown Voltage
I
C
=-10µA
Emitter-Base Breakdown Voltage
I
E
=-1.0µA
V
CB
=-20V
V
CE
=-20V
V
EB
=-5V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
CBO
-45
-50
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-0.1
-0.2
-0.1
V
V
V
µA
µA
µA
On Characteristics
DC Current Gain
I
C
=-100mA, V
CE
=-1.0V
BC807-16W
BC807-25W
BC807-40W
100
160
250
40
V
CE(sat)
V
BE(on)
-
-
-
-
-
-
-
-
250
400
600
-
-0.7
-1.2
V
V
h
FE
-
I
C
=-500mA,V
CE
=-1.0V)
Collector-Emitter Saturation Voltage
I
C
=-500mA, I
B
=-50mA
Base-Emitter On Voltage
I
C
=-500mA, V
CE
=-1.0V
Small-signal Characteristics
Current-Gain-Band width Product
I
C
=-10mA, V
CE
=-5.0V, f=100MHz
Output Capacitance
V
CB
=-10V,f=1.0MHz
f
T
C
ob
80
-
-
-
-
10
MHz
pF
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