BSS84W
P-Channel POWER MOSFET
P b
Lead(Pb)-Free
1
3
2
Description:
* These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
SOT-323(SC-70)
3
DRAIN
Features:
* Simple Drive Requirement
* Small Package Outline
1
GATE
2
SOURCE
Maximum Ratings
(T
A
=25°C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= (T
A
=25°C)
Pulsed Drain Current (tp
<=10µS)
Total Power Dissipation (T
A
=25°C)
Thermal Resistance – Junction–to–Ambient
Operating Junction Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DDS
V
GS
I
D
I
DM
P
D
R
θ
JA
T
J
Tstg
T
L
Value
50
±20
130
520
225
556
-55 to +150
-55 to +150
260
Unit
V
V
mA
mA
mW
°C/W
°C
°C
°C
Device Marking
BSS84W = PD
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BSS84W
Electrical Characteristics
(T
A
=25°C Unless otherwise noted)
Characteristic
Symbol
V
( B R ) D S S
V
GS (th)
I
GSS
Min
50
0.8
-
-
-
-
-
50
Typ
-
-
-
-
-
-
5.0
-
Max
-
2.0
±60
0.1
15
60
10
-
Unit
V
V
µA
Static
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
Gate–Source Threaded Voltage
V
DS
=V
GS
, I
D
=1.0mA
Gate-Body Leakage Current
V
GS
=±20V, V
DS
=0
Zero Gate Voltage Drain Current
V
DS
=25V, V
GS
=0
V
DS
=50V, V
GS
=0
V
DS
=50V, V
GS
=0, T
J
= 125°C)
Static Drain-Source On-Resistance
V
GS
=5.0V, I
D
=100mA
Transfer Admittance
V
DS
=25V, I
D
=100mA, f = 1.0kHz
I
DSS
µA
R
DS (
on
)
ly
fs
l
Ω
mS
Dynamic
Input Capacitance
V
DS
=5.0V
Output Capacitance
V
DS
=5.0V
Reverse Transfer Capacitance
V
DS
=5.0V
C
iss
C
oss
C
rss
-
-
-
30
10
5.0
-
-
-
pF
Switching
2
Turn-On Delay Time
V
DD
=-15V, I
D
=-2.5A, R
L
=50
Ω
Rise Time
V
DD
=-15V, I
D
=-2.5A, R
L
=50
Ω
Turn-Off Delay Time
V
DD
=-15V, I
D
=-2.5A, R
L
=50
Ω
Fall Time
V
DD
=-15V, I
D
=-2.5A, R
L
=50
Ω
Gate Charge
t
d(on)
t
r
t
d(off)
t
f
Q
T
-
-
-
-
-
2.5
1.0
16
8.0
6000
-
-
-
ns
-
-
pC
Source–Drain Diode
Continuous Current
Pulsed Current
Forward Voltage (Note 2.)
I
S
I
SM
V
SD
-
-
-
-
-
2.5
0.130
A
0.520
-
V
2. Switching characteristics are independent of operating junction temperature.
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BSS84W
TYPICAL ELECTRICAL CHARACTERISTICS
°
°
°
°
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
°
°
°
°
°
°
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance versus Drain Current
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BSS84W
TYPICAL ELECTRICAL CHARACTERISTICS
°
°
Figure 5. On–Resistance Variation with Temperature
Figure 6. Gate Charge
°
°
°
Figure 7. Body Diode Forward Voltage
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BSS84W
SOT-323 Outline Demensions
Unit:mm
A
T OP V IE W
B
C
D
E
G
H
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
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