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Datasheet> All Categories > Wireless rf/communication> Radio frequency and microwave> SPA1426ZSR
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SPA1426ZSR

Description
Wide Band Medium Power Amplifier, 1 Func, BIPolar,
CategoryWireless rf/communication    Radio frequency and microwave   
File Size815KB，13 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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SPA1426ZSR Overview

Wide Band Medium Power Amplifier, 1 Func, BIPolar,

SPA1426ZSR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instructionMODULE(UNSPEC)
Reach Compliance Codeunknown
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeMODULE(UNSPEC)
power supply5 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Maximum slew rate350 mA
technologyBIPOLAR

SPA1426ZSR Preview

SPA1426Z
0.7GHz to
2.2GHz 1W
InGaP HBT
Amplifier
SPA1426Z
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
Package: SOF-26
NOT FOR NEW DESIGNS
Product Description
RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar
Transistor (HBT) power amplifier. The SPA1426Z is made with InGaP-on-GaAs
device technology and fabricated with MOCVD for an ideal combination of low cost
and high reliability. It is well suited for use as a driver stage in macro/micro-cell
infrastructure equipment, or as the final output stage in pico-cell infrastructure
equipment. It features an input power detector, on/off power control, ESD protec-
tion, excellent overall robustness and a hand reworkable and thermally enhanced
SOF-26 package.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
(dBc)
Features
P
1dB
=29.5dBm @ 2140MHz
ACP = -65dBc with 17.0dBm
Channel Power @ 2140MHz
Low Thermal Resistance
Package
Power Up/Down Control<1s
Robust Class 1C ESD
Macro/Micro-Cell Driver
Stage
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA, IS-95
Single and Multi-Carrier Appli-
cations
ACP versus Channel Power, 2140MHz, W-CDMA
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
8.0
10.0
12.0
Si BiCMOS
14.0
Channel Power Out (dBm)
Parameter
Small Signal Gain
NE
W
Min.
12.7
Specification
Typ.
16.5
14.0
14.1
29.5
28.5
29.5
43
47
47
14.2
18.4
16.5
18.5
17.0
19.0
-55.0
18
10.5
5.3
DE
SI
GN
16.0
18.0
20.0
22.0
Max.
15.5
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBc
dB
dB
dB
885MHz
1960MHz
2140MHz
885MHz
1960MHz
2140MHz
885MHz
S
-40°C
25°C
85°C
Applications
Condition
Output Power at 1dB Compression
Output Third Order Intercept Point,
18dBm per Tone, 1MHz Spacing
FO
R
28.0
42
W-CDMA Channel Power
-65dBc ACP
-55dBc ACP
-65dBc ACP
-55dBc ACP
-65dBc ACP
-55dBc ACP
19dBm ACP
Input Return Loss
Output Return Loss
Noise Figure
-50.0
1960MHz
2140MHz
3GPP 3.5, test model 1, 64 DPCH
885MHz
885MHz
1960MHz
1960MHz
2140MHz
2140MHz
2140MHz
1960MHz
1960MHz
1960MHz
NO
T
DS120601
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 13
SPA1426Z
Absolute Maximum Ratings
Parameter
Max Device Current (l
CE
)
Max Device Voltage (V
CC
)*
Power Dissipation
Max CW Input Power, 50Output
Load
Max CW Input Power, 10:1 VSWR Out-
put Load
Max Modulated (W-CDMA) Input
Power, 50Output Load**
Max Modulated (W-CDMA) Input
Power, 10:1 VSWR Output
Load**
Max RF Output Power with 50 Out-
put Load (Continuous long term
operation)
Max Junction Temperature (TJ)
Operating Temperature Range (T
L
)
Maximum Storage Temperature
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
*Note: No RF Drive
**Note: W-CDMA, 64DPCH
Rating
750
6
3
29
18
22
15
27
+150
-40 to +85
+150
Class 1C
MSL 1
Unit
mA
V
W
dBm
dBm
dBm
dBm
dBm
°C
°C
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Caution! ESD sensitive device.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
NE
W
Parameter
Min.
Specification
Typ.
DE
SI
GN
Max.
350
5.5
100
Unit
mA
V
mA
A
°C/W
junction to lead
S
Condition
6
°C
FO
R
Operating Current (V
CC
=5V), Quies-
286
318
cent
Operating Voltage
5.0
Power Up Control Current (VPC=5V)
2.1
V
CC
Leakage Current (V
CC
=5V,
V
PC
=0V)
Thermal Resistance
21
Test Conditions: V
CC
=5V, I
CQ
=318mA Typ., T
L
=25°C, Z
S
=Z
L
=50
Simplified Device Schematic
GND
NO
T
VBias
1
Bias
NC
5
RF IN
2
RF OUT / VCC
VPC
3
4
VDET
GND
2 of 13
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120601
SPA1426Z
Typical RF Performance 850MHz to 910MHz Application Circuit
ACP versus Channel Power Out
880MHz, W-CDMA, 5V
ACP versus Channel Power Out
880MHz, IS-95, 5V
-40
-45
-50
-55
-40
-45
-50
-55
-60
(dBc)
(dBc)
-60
-65
-70
-75
-80
8
Source ACPR
10
12
-40°C
25°C
85°C
Source
-65
-70
-75
-80
-85
-40°C
25°C
85°C
Source
3GPP 3.5, 64 DPCH, Peak/Avg=11dB
14
16
18
20
22
-90
10
Source ACPR
12
14
16
IS-95A 9CH Fwd, Peak/Avg=9.1dB
18
20
22
24
Channel Power Out (dBm)
Channel Power Out (dBm)
-40
-45
-50
-55
DE
SI
GN
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
-90
22
10
Source ACPR
12
14
ACP versus Channel Power Out
W-CDMA, 5V, 25°C
ACP versus Channel Power Out
IS-95, 5V, 25°C
(dBc)
(dBc)
S
16
0.87
-60
-65
-70
-75
-80
8
Source ACPR
10
12
850Mhz
880Mhz
910MHz
Source
850Mhz
880Mhz
910MHz
Source
NE
W
3GPP 3.5, 64 DPCH, Peak/Avg=11dB
14
16
18
20
IS-95A 9CH Fwd, Peak/Avg=9.1dB
18
20
22
24
Channel Power Out (dBm)
Channel Power Out (dBm)
P1dB versus Frequency
FO
R
33
32
31
30
48
47
46
45
OIP3 versus Frequency
18dBm/Tone
(dBm)
(dBm)
44
43
42
41
29
28
27
26
25
NO
T
-40°C
25°C
85°C
0.87
0.88
0.89
0.90
0.91
40
39
38
0.85
0.86
0.88
0.89
0.90
-40°C
25°C
85°C
0.91
0.85
0.86
Frequency (GHz)
Frequency(GHz)
DS120601
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 13
SPA1426Z
Typical RF Performance 850MHz to 910MHz Application Circuit
S11 versus Frequency
0
-5
-10
20
18
16
14
S21 versus Frequency
S11 (dB)
S21 (dB)
12
10
8
6
-15
-20
-25
-30
700
750
800
850
900
950
1000
-40°C
25°C
85°C
4
2
0
700
750
800
850
900
950
-40°C
25°C
85°C
1000
0
-5
-10
-40°C
25°C
85°C
S12 (dB)
-20
-25
-30
-35
-40
700
750
800
S22 (dB)
-15
DE
SI
GN
0
-5
-10
-15
-20
-25
-30
700
750
800
1000
1.6
1.5
1.4
S12 versus Frequency
S
950
Frequency (MHz)
Frequency (MHz)
S22 versus Frequency
NE
W
-40°C
25°C
85°C
850
900
950
1000
850
900
Frequency (MHz)
Frequency (MHz)
Noise Figure versus Frequency
9
8
7
FO
R
10
V-Detect versus Output Power
at 880MHz
NF (dB)
6
5
4
3
2
1
0
V Detect (V)
1.3
1.2
1.1
1.0
0.9
0.8
NO
T
-40°C
25°C
85°C
6
9
12
15
18
21
24
27
30
33
850
860
870
880
890
900
910
Frequency (MHz)
Power Out (dBm)
4 of 13
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120601
SPA1426Z
Typical RF Performance 1930MHz to 1960MHz Application Circuit
ACP versus Channel Power Out
1960MHz, W-CDMA, 5V
-40°C
25°C
85°C
Source
-35
-40
-45
-50
-40
-45
-50
-55
-60
ACP versus Channel Power Out
1960MHz, IS-95, 5V
(dBc)
(dBc)
-55
-60
-65
-70
-75
-80
8
Source ACPR
10
12
3GPP 3.5, 64 DPCH, Peak/Avg=11dB
14
16
18
20
22
-65
-70
-75
-80
-85
-90
10
Source ACPR
12
14
16
-40°C
25°C
85°C
Source
IS-95A 9CH Fwd, Peak/Avg=9.1dB
18
20
22
24
-35
-40
-45
-50
1930Mhz
1960Mhz
1990MHz
Source
(dBc)
(dBc)
-55
-60
-65
-70
-75
-80
8
Source ACPR
10
12
NE
W
DE
SI
GN
-40
-45
-50
-55
-60
-65
-70
-75
-80
ACP versus Channel Power Out
W-CDMA, 5V, 25°C
ACP versus Channel Power Out
IS-95, 5V, 25°C
1.93Ghz
1.96Ghz
1.99GHz
Source
3GPP 3.5, 64 DPCH, Peak/Avg=11dB
14
16
18
20
-85
-90
22
10
Source ACPR
12
14
16
S
1.95
Channel Power Out (dBm)
Channel Power Out (dBm)
IS-95A 9CH Fwd, Peak/Avg=9.1dB
18
20
22
24
Channel Power Out (dBm)
Channel Power Out (dBm)
P1dB versus Frequency
OIP3 versus Frequency
55
53
51
49
32
31
P1dB (dBm)
OIP3 (dBm)
-40°C
25°C
85°C
30
29
28
27
26
25
FO
R
33
47
45
43
41
39
37
35
1.93
1.94
1.96
1.97
1.98
NO
T
-40°C
25°C
85°C
1.99
1.93
1.94
1.95
1.96
1.97
1.98
1.99
Frequency (GHz)
Frequency (GHz)
DS120601
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 13
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SPA1426ZSR Related Products

SPA1426ZSR SPA1426ZSQ SPA1426Z
Description Wide Band Medium Power Amplifier, 1 Func, BIPolar, Wide Band Medium Power Amplifier, 1 Func, BIPolar, RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maker Qorvo Qorvo Qorvo
package instruction MODULE(UNSPEC) MODULE(UNSPEC) MODULE(UNSPEC)
Reach Compliance Code unknown unknown unknown
Number of functions 1 1 1
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code MODULE(UNSPEC) MODULE(UNSPEC) MODULE(UNSPEC)
power supply 5 V 5 V 5 V
RF/Microwave Device Types WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Maximum slew rate 350 mA 350 mA 350 mA
technology BIPOLAR BIPOLAR BIPOLAR
Is it Rohs certified? conform to conform to -

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