K8P3315UQB
FLASH MEMORY
32Mb B-die Page NOR Specification
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
Revision 1.0
December 2007
K8P3315UQB
FLASH MEMORY
32M Bit (2M x16) Page Mode / Multi-Bank NOR Flash Memory
FEATURES
•
Single Voltage, 2.7V to 3.6V for Read and Write operations
Voltage range of 2.7V to 3.1V valid for MCP product
•
Organization
2M x16 bit (Word mode Only)
•
Fast Read Access Time : 60ns
•
Page Mode Operation
8 Words Page access allows fast asychronous read
Page Read Access Time : 20ns
•
Read While Program/Erase Operation
•
Multiple Bank architectures (8 banks)
Bank 0: 4Mbit (4Kw x 8 and 32Kw x 7)
Bank 1: 4Mbit (32Kw x 8)
Bank 2: 4Mbit (32Kw x 8)
Bank 3: 4Mbit (32Kw x 8)
Bank 4: 4Mbit (32Kw x 8)
Bank 5: 4Mbit (32Kw x 8)
Bank 6: 4Mbit (32Kw x 8)
Bank 7: 4Mbit (4Kw x 8 and 32Kw x 7)
•
OTP Block : Extra 256 word
- 128word for factory and 128word for customer OTP
•
Power Consumption (typical value)
- Active Read Current : 45mA (@10MHz)
- Program/Erase Current : 17mA
- Read While Program or Read While Erase Current : 35mA
- Standby Mode/Auto Sleep Mode : 15uA
•
Support Single & Quad word accelerate program
•
WP/ACC input pin
- Allows special protection of two outermost boot blocks at V
IL
,
regardless of block protect status
- Removes special protection of two outermost boot block at V
IH,
the two blocks return to normal block protect status
- Accelerated Quadword Program time : 1.5us
•
Erase Suspend/Resume
•
Program Suspend/Resume
•
Unlock Bypass Program
•
Hardware RESET Pin
•
Command Register Operation
•
Block Protection / Unprotection
•
Supports Common Flash Memory Interface
•
Operation Temperature Rnage
- Industrial Temperature : -40°C to 85°C
- Extended Temperature : -25°C to 85°C
- Commercial Temperature : 0°C to 70°C
•
Endurance : 100,000 Program/Erase Cycles Minimum
•
Data Retention : 10 years
•
Vio options at 1.8V and 3V I/O
•
Package options
- 48 Pin TSOP (20x12mm)
- 48 Ball FBGA (6x8mm, 0.8mm Ball Pitch)
- 64 Ball FBGA (13x11mm,
1.0mm
Ball Pitch)
GENERAL DESCRIPTION
The K8P3315UQB featuring single 3.0V power supply, is an
32Mbit NOR-type Flash Memory organized as 2Mx16. The
memory architecture of the device is designed to divide its
memory arrays into 78 blocks with independent hardware pro-
tection. This block architecture provides highly flexible erase
and program capability. The K8P3315UQB NOR Flash consists
of eight banks. This device is capable of reading data from one
bank while programming or erasing in the other banks.
The K8P3315UQB offers fast page access time of 20~30ns with
random access time of 60~70ns. The device′s fast access
times allow high speed microprocessors to operate without wait
states. The device performs a program operation in unit of 16
bits (Word) and erases in units of a block. Single or multiple
blocks can be erased. The block erase operation is completed
within typically 0.7 sec. The device requires 17mA as program/
erase current in the commercial and industrial temperature
ranges.
The K8P3315UQB NOR Flash Memory is created by using
Samsung's advanced CMOS process technology. This device is
available in 48 Pin TSOP package and 48/64 Ball FBGA pack-
age. The device is compatible with EPROM applications to
require high-density and cost-effective non-volatile read/write
storage solutions.
PIN DESCRIPTION
Pin Name
A0 - A20
DQ0 - DQ15
CE
OE
RESET
RY/BY
WE
WP/ACC
Vcc
V
SS
N.C
Address Inputs
Data Inputs / Outputs
Chip Enable
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Hardware Write Protection/Program Acceleration
Power Supply
Ground
No Connection
Pin Function
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
3
Revision 1.0
December 2007
Buy&Sell
京公网安备 11010802033920号
EEWORLD
