A Product Line of
Diodes Incorporated
ZXTPS717MC
12V PNP LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Features and Benefits
PNP Transistor
•
BV
CEO
> -12V
•
I
C
= -4A Continuous Collector Current
•
Low Saturation Voltage (-140mV max @ -1A)
•
R
SAT
= 65mΩ for a low equivalent On-Resistance
•
h
FE
characterized up to -10A for high current gain hold up
Schottky Diode
•
BV
R
> 40V
•
I
FAV
= 3A Average Peak Forward Current
•
Low V
F
< 500mV (@1A) for reduced power loss
•
Fast switching due to Schottky barrier
•
•
•
•
•
•
Low profile 0.8mm high package for thin applications
R
θJA
efficient, 40% lower than SOT26
2
6mm footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
Case: DFN3020B-8
Case Material: Molded Plastic, “Green” Molding Component
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
•
DC – DC Converters
Charging circuits
Mobile phones
Motor control
Portable applications
DFN3020B-8
C1
K2
K2
K2
C1
C1
B1
K2
C1
E1
Top View
Bottom View
PNP Transistor
A2
Schottky Diode
A2
n/c
E1
B1
Pin 1
Equivalent Circuit
Bottom View
Pin-Out
n/c = Not Connected internally
Ordering Information
(Note 3)
Product
ZXTPS717MCTA
Notes:
Marking
1S1
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
1S1
1S1 = Product type marking code
Top view, dot denotes pin 1
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
1 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
PNP - Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Notes 4 and 7)
(Notes 5 and 7)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Limit
-20
-12
-7
-12
-4
-4.4
-1
Unit
V
A
PNP - Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
(Notes 4 & 7)
Power Dissipation
Linear Derating Factor
(Notes 5 & 7)
P
D
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Note 9)
Symbol
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
R
θ
JA
R
θ
JL
T
J
, T
STG
°C/W
°C
4. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
2 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
PNP - Thermal Characteristics
2.0
Limited
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(SAT)
10sqcm 1oz Cu
Two active die
1.5
1
DC
1s
100ms
10ms
8sqcm 2oz Cu
One active die
Single Pulse, T
amb
=25°C
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
1.0
0.1
1ms
100us
0.5
0.01
0.1
0.0
0
25
50
75
100
125
150
1
10
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
225
80
60
D=0.5
8sqcm 2oz Cu
One active die
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
200
175
150
125
100
75
50
25
0
0.1
1
2oz Cu
One active die
1oz Cu
One active die
1oz Cu
Two active die
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
2oz Cu
Two active die
0
100µ
1m
10m 100m
1
10
100
1k
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T
amb
=25°C
T
j max
=150°C
Continuous
2oz Cu
One active die
2oz Cu
Two active die
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1oz Cu
Two active die
1oz Cu
One active die
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
3 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
Schottky - Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
D = 0.5
Pulse width
≤
300µs
t
≤
100µs
t
≤
10ms
Symbol
V
R
I
F
I
FRM
I
FSM
Limit
40
1.85
3
12
7
Unit
V
A
Schottky - Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
(Notes 10 & 13)
Power Dissipation
Linear Derating Factor
(Notes 11 & 13)
P
D
(Notes 12 & 13)
(Notes 12 & 14)
(Notes 10 & 13)
(Notes 11 & 13)
(Notes 12 & 13)
(Notes 12 & 14)
(Note 15)
Symbol
Value
1.2
12
2
20
0.9
9
1.36
13.6
83.3
51.0
111
73.5
20.2
-55 to +150
125
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Maximum Junction Temperature
Notes:
R
θ
JA
R
θ
JL
T
STG
T
J
°C/W
°C
10. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half.
11. Same as note (10), except the device is measured at t <5 sec.
12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
13. For a dual device with one active die.
14. For dual device with 2 active die running at equal power.
15. Thermal resistance from junction to solder-point (on the exposed cathode pad).
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
4 of 10
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTPS717MC
Schottky - Thermal Characteristics
1.5
Max Power Dissipation (W)
Thermal Resistance (°C/W)
80
60
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
Two active die
1.0
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
D=0.5
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0.5
0
100µ
0.0
0
25
50
75
100
125
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.0
225
T
amb
=25°C
Derating Curve
Thermal Resistance (°C/W)
P
D
Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
0.1
T
j max
=125°C
Continuous
200
175
150
125
100
75
50
25
0
0.1
1
2oz Cu
One active die
2oz Cu
Two active die
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
One active die
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
Two active die
1
10
100
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
5 of 10
www.diodes.com
April 2011
© Diodes Incorporated
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