2SC5175
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5175
High-Current Switching Applications
Unit: mm
•
•
Low collector-emitter saturation voltage: V
CE (sat)
= 0.4 V (max)
(I
C
= 2.5 A, I
B
= 125 mA)
High-speed switching: t
stg
= 0.8 µs (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
60
50
5
5
8
1
1.8
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10T1A
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE (sat)
f
T
C
ob
t
on
20 µs
I
B1
Switching time
Storage time
t
stg
Input
I
B2
Test Condition
V
CB
= 50 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 1 V, I
C
= 1 A
V
CE
= 1 V, I
C
= 2.5 A
I
C
= 2.5 A, I
B
= 125 mA
I
C
= 2.5 A, I
B
= 125 mA
V
CE
= 4 V, I
C
= 1 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Weight: 1.5 g (typ.)
Min
―
―
50
100
60
―
―
―
―
―
Typ.
―
―
―
―
―
0.25
1.0
100
45
0.1
Max
1
1
―
320
―
0.4
1.3
―
―
―
Unit
µA
µA
V
V
V
MHz
pF
I
B1
I
B2
Output
12
Ω
―
0.8
―
µs
V
CC
= 30 V
Fall time
t
f
I
B1
=
−I
B2
= 125 mA, duty cycle
≤
1%
―
0.1
―
1
2004-07-26
2SC5175
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-26
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