DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed for high-speed switching and features low V
CE(sat)
and high h
FE
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High h
FE
and low V
CE(sat)
:
V
CE(sat)
≤
0.3 V @I
C
= 3.0 A, I
B
= 0.15 A
h
FE
≥
100
@V
CE
= 2.0 V, I
C
= 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
100
60
7.0
5.0
10
2.5
1.8
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4815
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
Conditions
I
C
= 5.0 A, I
B
= 0.5 A, L = 1 mH
I
C
= 2.5 A, I
B1
=
−I
B2
= 0.25 A
V
BE(OFF)
=
−1.5
V, L = 180
µ
H, Clamped
V
CB
= 100 V, I
E
= 0
V
EB
= 7.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 0.5 A
V
CE
= 2.0 V, I
C
= 1.0 A
V
CE
= 2.0 V, I
C
= 3.0 A
I
C
= 3.0 A, I
B
= 0.15 A
I
C
= 4.0 A, I
B
= 0.2 A
I
C
= 3.0 A, I
B
= 0.15 A
I
C
= 4.0 A, I
B
= 0.2 A
V
CB
= 10 V, I
E
= 0 , f = 1.0 MHz
V
CE
= 10 V, I
C
= 0.5 A
I
C
= 3.0 A, R
L
= 17
Ω,
I
B1
=
−I
B2
= 0.15 A, V
CC
≅
50 V
Refer to the test circuit.
Fall time
t
f
0.25
100
100
60
0.15
0.3
0.9
1.2
70
150
0.1
1.0
0.3
0.5
1.2
1.5
V
V
V
V
pF
MHz
200
400
MIN.
60
60
TYP.
MAX.
Unit
V
V
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
I
CBO
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
10
10
µ
A
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
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Data Sheet D15605EJ3V0DS
2SC4815
TYPICAL CHARACTERISTICS (Ta = 25°C)
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