DTC144TCA
NPN DIGITAL TRANSISTOR
P b
Lead(Pb)-Free
Features:
* Built-in bias resistors enable the con guration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
* The bias resistors consist of thin- lm resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic e ects.
* Only the on/o conditions need to be set for operation,
making device design easy.
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
Addreviated symbol: 06
MAXIMUM RATINGS*
T
A
=25
℃
unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Value
Units
V
V
V
mA
mW
℃
℃
50
50
5
100
200
150
-55~+150
Tj
T
stg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Ic=
50µ
A,I
E
=0
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R1
32.9
250
47
61.1
100
300
MIN
50
50
5
0.5
0.5
600
0.3
V
MHz
kΩ
TYP
MAX
UNIT
V
V
V
uA
uA
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-o current
Emitter cut-o current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Input resistor
Collector-emitter breakdown voltage
Ic=
1
mA,I
B
=0
I
E
=
50µ
A,I
C
=0
V
CB
=
50
V,I
E
=0
V
EB
=
4
V,I
C
=0
V
CE
=
5
V,I
C
=
1
mA
I
C
=5mA,I
B
=0.5mA
V
CE
=
10
V,I
E
=-
5
mA, f=
100
MHz
WEITRON
http://www.weitron.com.tw
1/3
27-Jan-10
Electronics Design Contest
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EEWORLD
