MMBTH10
NPN 1.1 GHz RF Transistor
P b
Lead(Pb)-Free
BASE
COLLECTOR
3
1
2
FEATURES
Designed for VHF/UHF Amplifier Applications
EMITTER
and High Output VHF oscillators.
High Current Gain Bandwidth product.
Ideal for Mixer and RF Amplifier Application with Collector Current in the
100mA~20mA Range in Common emitter or Common base mode of operations.
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
25
30
3
50
225
1.8
Unit
V
V
V
mA
Total Power Dissipation FR-5 Board
(1)
TA =25°C
Derate above =25°C
Thermal Resistance , Junction Ambient
Junction Temperature
Storage Temperature
1. Tj = 25°C unless otherwise specified.
mW
mW/°C
°C/W
°C
°C
RθJA
TJ
Tstg
556
+150
-55~150
Device Marking
MMBTH10=3EM , HT10
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MMBTH10
ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued)
Characteristics
Collector-Emitter Voltage (IC =10mA , IB = 0 )
Collector-Base Voltage (IC =10µA , IE = 0)
Emitter-Base Voltage (IE =10µA , IC =0)
Collector cut-off current ( IE = 0 , VCB = 25V )
Emitter cut-off current ( IC = 0 , VEB = 2.0V )
DC current gain (IC=4mA , V
CE
= 10V )
Collector-Emitter Saturation (IC=4mA ,IB = 0.4mA )
Base-Emitter On Voltage (IC=4mA , V
CE
= 10V )
Transition frequency (IC =4mA , V
CE
= 10V , f =100MHz )
Collector-Base Capacitance(V
CB
=10V ,I
E
= 0 , f =1.0MHz )
Common-Base Feedback Capacitance
(V
CB
= 10V , IE= 0 , f = 1MHz )
Collector Base Time Constant
(IC =4mV , V
CB
= 10V , f = 31.8MHz )
Symbol
VCEO
VCBO
VEBO
I CBO
I EBO
hFE
VCE(sat)
VBE(on)
fT
C
cb
C
rb
Min
25
30
3
-
-
Typ
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
-
0.5
0.95
-
0.7
Unit
V
V
V
nA
nA
-
V
V
GH
Z
pF
pF
ps
60
-
-
0.65
-
-
-
1.1
-
-
-
0.65
9.0
rb’Cc
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MMBTH10
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
80
60
40
20
0
0.1
0.2
125 °C
Vce = 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β
= 10
0.15
125 °C
25 °C
25 °C
0.1
- 40 °C
0.05
- 40 °C
0.5
1
2
5
10 20
I
C
- COLLECTOR CURRENT (mA)
P 42
50
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
20
1
V
B E(ON)
BASE-EMITTER ON VOLTAGE (V)
-
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
- 40 °C
25 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.01
V
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
= 5V
- 40 °C
25 °C
125 °C
I
C
1
10
- COLLECTOR CURRENT (mA)
P 42
20
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
P 42
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
10
Power Dissipation vs
Ambient Temperature
350
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
V
CB
= 30V
SOT-23
1
0.1
25
50
75
100
125
°
T
A
- AMBIENT TEMPERATURE ( C)
150
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MMBTH10
Common Base Y Parameters vs. Frequency
Input Admittance
Y
ib
- INPUT ADMITTANCE (mmhos)
120
80
40
0
-40
-80
V
CE
= 10V
I
C
= 5 mA
Output Admittance
Y
ob
- OUTPUT ADMITTANCE (mmhos)
12
10
8
6
4
2
0
100
200
500
f - FREQUENCY (MHz)
P 42 (BASE)
V
CE
= 10V
g
ib
I
C
= 5 mA
b
ob
g
ob
1000
b
ib
200
500
f - FREQUENCY (MHz)
P 42 (BASE)
-120
100
1000
Y
fb
- FORWARD ADMITTANCE (mmhos)
120
80
40
0
-40
-80
Y
rb
- REVERSE ADMITTANCE (mmhos)
Forward Transfer Admittance
b
fb
Reverse Transfer Admittance
V
CE
= 10V
I
C
= 5 mA
8
6
g
4
fb
-b
rb
V
CE
= 10V
I
C
= 5 mA
200
500
f - FREQUENCY (MHz)
1000
2
-120
100
0
100
-g
rb
200
500
f - FREQUENCY (MHz)
(
S )
1000
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MMBTH10
Common Emitter Y Parameters vs. Frequency
Input Admittance
Y
ie
- INPUT ADMITTANCE (mmhos)
24
20
16
12
8
4
0
100
200
500
f - FREQUENCY (MHz)
1000
V
CE
= 10V
I
C
= 2 mA
Y
oe
- OUTPUT ADMITTANCE (mmhos)
Output Admittance
V
CE
= 10V
I
C
= 2 mA
6
5
4
3
2
1
0
100
g
ie
b
oe
b
ie
g
oe
200
500
f - FREQUENCY (MHz)
P 42 (EMITTER)
1000
Y
fe
- FORWARD ADMITTANCE (mmhos)
60
40
20
0
V
CE
= 10V
Y
re
- REVERSE ADMITTANCE (mmhos)
Forward Transfer Admittance
g
I
C
= 2 mA
Reverse Transfer Admittance
1
V
CE
= 10V
I
C
= 2 mA
1.2
fe
0.8
0.6
0.4
0.2
0
100
-b
re
-20
-40
-60
100
b
fe
200
500
f - FREQUENCY (MHz)
P 42 (EMITTER)
-g
re
200
500
f - FREQUENCY (MHz)
1000
1000
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