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2SD1314_06

Description
High Power Switching Applications
File Size136KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SD1314_06 Overview

High Power Switching Applications

2SD1314
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
High Power Switching Applications
Motor Control Applications
Unit: mm
High DC current gain: h
FE
= 100 (min) (V
CE
= 5 V, I
C
= 15 A)
Low saturation voltage: V
CE (sat)
= 2 V (max) (I
C
= 15 A, I
B
= 0.4 A)
High speed: t
f
= 3
μs
(max) (I
C
= 15 A)
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
600
450
6
15
30
1.0
150
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
300
100
EMITTER
1
2006-11-21

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