EEWORLDEEWORLDEEWORLD

Part Number

Search

SSM5N15FU

Description
High Speed Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size172KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SSM5N15FU Overview

High Speed Switching Applications

SSM5N15FU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SSM5N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance : R
DS (ON)
= 4.0
Ω
(max) (@V
GS
= 4 V)
: R
DS (ON)
= 7.0
Ω
(max) (@V
GS
= 2.5 V)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
±20
100
200
200
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
JEDEC
JEITA
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2L1B
high temperature/current/voltage and the significant change in
Weight: 6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating,
Marking
Equivalent Circuit
(top view)
5
4
5
4
DP
1
2
3
Q1
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2008-12-11

SSM5N15FU Related Products

SSM5N15FU SSM5N15FU_08
Description High Speed Switching Applications High Speed Switching Applications

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1196  327  1672  2282  2485  25  7  34  46  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号