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SSM5N15FU_08

Description
High Speed Switching Applications
File Size172KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SSM5N15FU_08 Overview

High Speed Switching Applications

SSM5N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance : R
DS (ON)
= 4.0
Ω
(max) (@V
GS
= 4 V)
: R
DS (ON)
= 7.0
Ω
(max) (@V
GS
= 2.5 V)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
±20
100
200
200
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
JEDEC
JEITA
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2L1B
high temperature/current/voltage and the significant change in
Weight: 6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating,
Marking
Equivalent Circuit
(top view)
5
4
5
4
DP
1
2
3
Q1
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2008-12-11

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