BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
1.5 A
200 V to 1600 V
30 A
1.0 μA
1.15 V
20 mJ
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
E
R
T
J
max.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG10D
BYG10D
200
BYG10G
BYG10G
400
BYG10J
BYG10J
600
1.5
30
BYG10K
BYG10K
800
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
V
A
A
UNIT
20
- 55 to + 150
mJ
°C
Revision: 21-Dec-11
Document Number: 88957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum
instantaneous
forward voltage
(1)
Maximum DC
reverse current
Maximum reverse
recovery time
TEST CONDITIONS
I
F
= 1 A
I
F
= 1.5 A
V
R
= V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
V
F
I
R
t
rr
SYMBOL
BYG10D
BYG10G
BYG10J
BYG10K
1.1
1.15
1
10
4
V
BYG10M
BYG10Y
UNIT
μA
μs
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
SYMBOL
R
JL
R
JA
(1)
R
JA
(2)
R
JA
(1)
(3)
BYG10D
BYG10G
BYG10J
25
BYG10K
BYG10M
BYG10Y
UNIT
°C/W
°C/W
150
125
100
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYG10D-E3/TR
BYG10D-E3/TR3
BYG10DHE3/TR
(1)
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
TR
TR3
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYG10DHE3/TR3
Note
(1)
AEC-Q101 qualified
Revision: 21-Dec-11
Document Number: 88957
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Vishay General Semiconductor
100
400
Reverse Power Dissipation (mW)
350
300
250
200
150
100
50
0
V
R
= V
RRM
P
R
- Limit at 100 % V
R
10
Forward Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
P
R
- Limit at 80 % V
R
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
Forward Voltage (V)
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
R
θJA
≤
125 K/W
R
θJA
≤
150 K/W
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤
25 K/W
30
f = 1 MHz
25
Average Forward Current (A)
Diode Capacitance (pF)
20
15
10
5
0
0.1
1
10
100
Ambient Temperature (°C)
Reverse Voltage (V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
5000
T
A
= 125 °C
Reverse Recovery Time (ns)
4000
T
A
= 100 °C
3000
T
A
= 75 °C
2000
T
A
= 50 °C
T
A
= 25 °C
1000
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Current (µA)
100
10
1
25
50
75
100
125
150
0
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision: 21-Dec-11
Document Number: 88957
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG10D thru BYG10Y
www.vishay.com
Vishay General Semiconductor
2000
Reverse Recovery Charge (nC)
T
A
= 125 °C
1600
T
A
= 100 °C
1200
T
A
= 75 °C
T
A
= 50 °C
800
T
A
= 25 °C
400
I
R
= 0.5 A, i
R
= 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Dec-11
Document Number: 88957
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000