TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
ed*
ent
at
P
Dimensions in inches
and (millimeters)
Breakdown Voltage
6.8 to 43.0V
Peak Pulse Power
400W
Mounting Pad Layout
0.060 MIN
(1.52 MIN)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.094 MAX
(2.38 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
(5.58)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
*Patent #’s
4,980,315
5,166,769
5,278,094
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Ideal for automated placement
• Low profile package
• Built-in strain relief
• Exclusive patented PAR
®
oxide passivated
chip construction
• 400W peak pulse power capability with a
10/1000ms waveform, repetition rate
(duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• For devices with V
(BR)
≥
10V I
D
are typically
less than 1.0mA at T
A
= 150°C
• Designed for under the hood surface mount
applications
• High temperature soldering:
250°C/10 seconds at terminals
A
Available in uni-directional only
Mechanical Data
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position:
Any
Weight:
0.002 oz., 0.064 g
Packaging codes/options:
5A/7.5K per 13" Reel (12mm Tape), 90K/box
11/1.8K per 7" Reel (12mm Tape), 36K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak power dissipation with a 10/1000µs waveform
(1)(2)
(Fig. 3)
Peak power pulse current with a
10/1000µs waveform
(1)
(Fig. 1)
Peak forward surge current 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage at 25A
(3)
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
= 25°C unless otherwise noted)
Value
Minimum 400
See Next Table
40
3.5
–65 to +185
Unit
W
A
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 0.5mm) copper pads attached to each terminal
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Document Number 88405
06-May-02
www.vishay.com
1
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Min.
Max.
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(Volts)
Maximum
Reverse
Leakage
at V
WM
I
R
(µA)
T
J
= 150°C Maximum
Maximum Peak Pulse
Reverse
Surge
Leakage
Current
at V
WM
I
PPM (Note 2)
I
D
(µA)
(Amps)
Maximum
Clamping
Voltage
at I
PPM
Vc (Volts)
TPSMA6.8
TPSMA6.8A
TPSMA7.5
TPSMA7.5A
TPSMA8.2
TPSMA8.2A
TPSMA9.1
TPSMA9.1A
TPSMA10
TPSMA10A
TPSMA11
TPSMA11A
TPSMA12
TPSMA12A
TPSMA13
TPSMA13A
TPSMA15
TPSMA15A
TPSMA16
TPSMA16A
TPSMA18
TPSMA18A
TPSMA20
TPSMA20A
TPSMA22
TPSMA22A
TPSMA24
TPSMA24A
TPSMA27
TPSMA27A
TPSMA30
TPSMA30A
TPSMA33
TPSMA33A
TPSMA36
TPSMA36A
TPSMA39
TPSMA39A
TPSMA43
TPSMA43A
ADP
AEP
AFP
AGP
AHP
AKP
ALP
AMP
ANP
APP
AQP
ARP
ASP
ATP
AUP
AVP
AWP
AXP
AYP
AZP
BDP
BEP
BFP
BGP
BHP
BKP
BLP
BMP
BNP
BPP
BQP
BRP
BSP
BTP
BUP
BVP
BWP
BXP
BYP
BZP
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
35.10
37.10
38.70
40.90
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.30
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
42.90
41.00
47.30
45.20
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.65
8.92
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
31.60
33.30
34.80
36.80
300
300
150
150
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.
45.7
52.0
49.9
56.4
53.9
61.9
59.3
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88405
06-May-02
TPSMA6.8 thru TPSMA43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
T
A
= 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
P
PPM,
Peak Power (KW)
75
50
1.0
25
0.2 x 0.2" (5.0 x 5.0mm)
copper pad areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
50
100
150
200
td, Pulse Width, sec.
T
A
, Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
tr = 10µsec.
Peak Value
I
PPM
Fig. 4 – Typical Junction Capacitance
T
J
= 25°C
f = 1 MHz
Vsig = 50mVp-p
1,000
V
R
measured
at zero bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
, Junction Capacitance, pF
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
100
V
R
measured
at stand-off
voltage, V
WM
10
1
10
100
200
td
0
0
1.0
2.0
3.0
4.0
t — Time (ms)
V
(BR)
, Breakdown Voltage (V)
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
200
I
FSM,
Peak Forward Surge Current (A)
T
J
= T
J
max
8.3ms single half sine-wave
(JEDEC method)
100
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Document Number 88405
06-May-02
www.vishay.com
3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
