®
X02 Series
1.25A SCRs
SENSITIVE
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
1.25
600 and 800
50 to 200
Unit
A
V
µA
G
A
K
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
TO-92
(X02xxA)
SOT-223
(X02xxN)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Parameter
TO-92
SOT-223
TO-92
SOT-223
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
TI = 55°C
Ttab = 95°C
TI = 55°C
0.8
Ttab = 95°C
Tj = 25°C
25
22.5
2.5
50
1.2
0.2
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
A
A
1.25
A
Value
Unit
IT
(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
Tj
September 2000 - Ed: 3
1/6
X02 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
X02xx
Symbol
I
GT
V
D
= 12 V
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA R
GK
= 1 kΩ
I
G
= 1 mA R
GK
= 1 kΩ
V
D
= 67 % V
DRM
R
GK
= 1 kΩ
I
TM
= 2.5 A
tp = 380 µs
Tj = 110°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
R
L
= 140
Ω
Test Conditions
02
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
10
1.45
0.9
200
5
500
µA
-
200
0.8
0.1
8
5
6
15
05
20
50
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
Unit
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
R
GK
= 1 kΩ
THERMAL RESISTANCES
Symbol
R
th(j-l)
R
th(j-t)
R
th(j-a)
Junction to leads (DC)
Junction to tab (DC)
Junction to ambient (DC)
S = 5 cm
²
S = Copper surface under tab
Parameter
TO-92
SOT-223
TO-92
SOT-223
Value
60
25
150
60
Unit
°C/W
PRODUCT SELECTOR
Part Number
600 V
X0202MA
X0202MN
X0202NA
X0202NN
X0205MA
X0205MN
X0205NA
X0205NN
X
X
X
X
X
X
X
X
Voltage
800 V
200 µA
200 µA
200 µA
200 µA
50 µA
50 µA
50 µA
50 µA
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
Sensitivity
Package
2/6
X02 Series
ORDERING INFORMATION
SENSITIVE
SCR
SERIES
X
02
02
M
A
Blank
1BA2
PACKING MODE:
1BA2: TO-92 Bulk
2BL2: TO-92 Ammopack
5BA4: SOT-223 Tape & Reel
CURRENT: 1.25A
VOLTAGE:
M: 600V
N: 800V
SENSITIVITY:
02: 200µA
05: 50µA
PACKAGE:
A: TO-92
N: SOT-223
OTHER INFORMATION
Part Number
X02xxyA 1BA2
X02xxyA 2BL2
X0202yN 5BA4
X0205yN 5BA4
Marking
X02xxyA
X02xxyA
X2y
X5y
Weight
0.2 g
0.2 g
0.12 g
0.12 g
Base Quantity
2500
2000
1000
1000
Packing mode
Bulk
Ammopack
Tape & reel
Tape & reel
Note:
xx = sensitivity, y = voltage
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
Fig. 2-1:
Average and D.C. on-state current
versus lead temperature (SOT-223/TO-92).
IT(av)(A)
SOT-223
TO-92
SOT-223
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IT(av)(A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TO-92
0.4
0.2
0.0
0
25
Tlead or Tlab(°C)
50
75
100
125
3/6
X02 Series
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
IT(av)(A)
SOT-223
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
SOT-223
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
TO-92
0.10
SOT-223
TO-92
Tamb(°C)
0
25
50
75
100
125
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40
-20
0
20
40
60
80
100
120 140
Ω
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IH[Rgk] / IH[Rgk = 1 kΩ]
Tj = 25°C
Rgk(kΩ)
1E-1
1E+0
1E+1
0.0
1E-2
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0
dV/dt[Rgk]/dV/dt [Rgk=1kΩ]
Tj = 125°C
VD = 0.67xVDRM
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k
Ω
]
20
18
16
14
12
10
8
6
4
2
0
1.0
0.1
0.0
Rgk(kΩ)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Cgk(nF)
0
2
4
6
8
10
12
14
16
18
20
22
4/6
X02 Series
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A), I
2
t(A
2
S)
300
25
20
15
10
ITSM(A)
tp=10ms
Onecycle
100
Nonrepetitive
Tjinitial=25°C
Number of cycles
Repetitive
T
amb=25°C
10
5
tp(ms)
0
1
10
100
1000
1
0.01
0.10
1.00
10.00
Fig. 10:
On-state characteristics (maximum
values).
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
µm)
(SOT-223).
Rth(j-a) (°C/W)
130
120
110
100
90
80
70
60
50
40
30
20
S(cm
2
)
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
3E+1
1E+1
ITM(A)
1E+0
VTM(V)
1E-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
3.5
4.0 4.5
5.0
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
DIMENSIONS
A
a
B
C
REF.
Millimeters
Min.
Typ.
1.35
4.70
2.54
4.40
12.70
3.70
0.50
0.173
0.500
Max.
Min.
Inches
Typ.
0.053
0.185
0.100
Max.
F
D
E
A
B
C
D
E
F
a
0.146
0.019
5/6
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