CMBT3904E_10 datasheet, PDF - EEWORLD Datasheet

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CMBT3904E_10: DescriptionENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; File Size357KB，3 Pages; ManufacturerCentral Semiconductor

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ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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CMBT3904E NPN

CMBT3906E PNP

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMBT3904E

(NPN) and CMBT3906E (PNP) are general purpose

transistors with enhanced specifications. These

devices are ideal for applications where ultra small

size and power dissipation are the prime requirements.

Packaged in the

FEMTOmini™

SOT-923 package,

these transistors provide performance characteristics

suitable for the most demanding size constrained

applications.

MARKING CODES: CMBT3904E: B

CMBT3906E: G

APPLICATIONS

• DC / DC Converters

• Voltage Clamping

• Protection Circuits

• Battery powered applications including:

Cell Phones, Digital Cameras, Pagers,

PDAs, Laptop Computers, etc.

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

6.0

200

100

-65 to +150

1250

UNITS

°C

°C/W

SOT-923 CASE

FEATURES

• Very Small Package Size

• 200mA Collector Current

• Low VCE(SAT) (0.1V Typ @ 50mA)

• Miniature 0.8 x 0.6 x 0.4mm

Ultra Low height profile

FEMTOmini™

Surface Mount Package

♦

Collector-Base Voltage

♦

Emitter-Base Voltage

MAXIMUM RATINGS:

(TA=25°C)

Collector-Emitter Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

ICEV

BVCEO

TEST CONDITIONS

VCE=30V, VEB=3.0V

IC=10µA

IC=1.0mA

IE=10µA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

MIN

6.0

NPN

TYP

115

7.5

0.057

0.100

PNP

TYP

7.9

0.050

0.100

0.750

0.850

MAX

UNITS

♦

BVCBO

♦

BVEBO

♦

VCE(SAT)

♦

VCE(SAT)

VBE(SAT)

0.100

0.200

0.850

0.950

0.650

0.750

0.850

♦

Enhanced specification.

R1 (8-January 2010)

CMBT3904E_10 Related Products

	CMBT3904E_10	CMBT3904E	CMBT3906E
Description	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
package instruction	-	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	-	3	3
Reach Compliance Code	-	not_compliant	_compli
ECCN code	-	EAR99	EAR99
Maximum collector current (IC)	-	0.2 A	0.2 A
Collector-emitter maximum voltage	-	40 V	40 V
Configuration	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	30	30
JESD-30 code	-	R-PDSO-F3	R-PDSO-F3
JESD-609 code	-	e0	e0
Number of components	-	1	1
Number of terminals	-	3	3
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	PNP
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	FLAT	FLAT
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON
Nominal transition frequency (fT)	-	300 MHz	300 MHz
Maximum off time (toff)	-	250 ns	250 ns
Maximum opening time (tons)	-	70 ns	70 ns

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