CMLDM3737 datasheet, PDF - EEWORLD Datasheet

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CMLDM3737: DescriptionSURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS; File Size591KB，3 Pages; ManufacturerCentral Semiconductor

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CMLDM3737 Overview

SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

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CMLDM3737

SURFACE MOUNT

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM3737

consists of Dual N-Channel Enhancement-mode silicon

MOSFETs designed for high speed pulsed amplifier

and driver applications. These MOSFETs offer Very

Low rDS(ON) and Low Threshold Voltage.

MARKING CODE: 7C3

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

• Complementary Dual P-Channel Device: CMLDM5757

SYMBOL

VDS

VGS

IDM

TJ, Tstg

UNITS

°C

°C/W

MAX

5.0

1.0

1.2

0.55

0.7

0.9

ID=500mA

1.58

0.17

0.24

UNITS

μA

SOT-563 CASE

APPLICATIONS:

• Load Switch / Level Shifting

• Battery Charging

• Boost Switch

• Electro-luminescent Backlighting

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current (tp=10μs)

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

8.0

540

1.5

350

300

150

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=4.5V, VDS=0

IDSS

VDS=16V, VGS=0

BVDSS

VGS(th)

VSD

rDS(ON)

Qg(tot)

Qgs

Qgd

VGS=0, ID=250μA

VDS=VGS, ID=250μA

VGS=0, IS=350mA

VGS=4.5V, ID=540mA

VGS=2.5V, ID=500mA

VGS=1.8V, ID=350mA

VDS=10V, VGS=4.5V,

0.45

VDS=10V, VGS=4.5V, ID=500mA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

R1 (28-October 2010)

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