CMLT5078E_10 datasheet, PDF - EEWORLD Datasheet

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CMLT5078E_10: DescriptionSURFACE MOUNT SILICON DUAL TRANSISTORS; File Size524KB，3 Pages; ManufacturerCentral Semiconductor

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CMLT5078E_10 Overview

SURFACE MOUNT SILICON DUAL TRANSISTORS

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CMLT5078E NPN/PNP

CMLT5087E PNP/PNP

CMLT5088E NPN/NPN

ENHANCED SPECIFICATION

SURFACE MOUNT

SILICON DUAL TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5078E,

CMLT5087E, and CMLT5088E, are Silicon transistors

in a PICOmini™ surface mount package with enhanced

specifications designed for applications requiring high

gain and low noise.

MARKING CODE & CONFIGURATION:

CMLT5078E: DUAL, COMPLEMENTARY: L78

CMLT5087E: DUAL, PNP: L87

CMLT5088E: DUAL, NPN: L88

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

C/W

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25

C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN

PNP

MAX

ICBO

IEBO

VCB=20V

VEB=3.0V

IC=100µA

IC=1.0mA

IE=100µA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500µA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7kHz

Enhanced specification.

Additional Enhanced specification.

350

5.0

135

8.7

110

700

300

100

4.0

1400

3.0

430

435

430

125

150

105

7.5

225

700

390

380

350

100

400

800

900

UNITS

♦

BVCBO

♦

BVCEO

♦

BVEBO

♦

VCE(SAT)

♦♦

VCE(SAT)

♦

hFE

VBE(SAT)

♦

hFE

♦♦

hFE

♦

Cob

Cib

hfe

MHz

♦

♦♦

R3 (20-January 2010)

CMLT5078E_10 Related Products

	CMLT5078E_10	CMLT5078E	CMLT5088E
Description	SURFACE MOUNT SILICON DUAL TRANSISTORS	SURFACE MOUNT SILICON DUAL TRANSISTORS	SURFACE MOUNT SILICON DUAL TRANSISTORS
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
package instruction	-	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	-	6	6
Reach Compliance Code	-	not_compliant	not_compliant
ECCN code	-	EAR99	EAR99
Other features	-	LOW NOISE	LOW NOISE
Maximum collector current (IC)	-	0.1 A	0.1 A
Collector-emitter maximum voltage	-	50 V	50 V
Configuration	-	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	-	50	50
JESD-30 code	-	R-PDSO-F6	R-PDSO-F6
JESD-609 code	-	e0	e0
Number of components	-	2	2
Number of terminals	-	6	6
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN AND PNP	NPN
Maximum power dissipation(Abs)	-	0.35 W	0.35 W
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	FLAT	FLAT
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	SILICON
Nominal transition frequency (fT)	-	100 MHz	100 MHz
Base Number Matches	-	1	1

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