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CMPD1001_10

Description
SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE
File Size525KB,3 Pages
ManufacturerCentral Semiconductor
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CMPD1001_10 Overview

SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE

CMPD1001
CMPD1001A
CMPD1001S
SURFACE MOUNT
HIGH CURRENT
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD1001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for applications
requiring high current capability.
SOT-23 CASE
The following configurations are available:
CMPD1001
CMPD1001A
CMPD1001S
SINGLE
DUAL, COMMON ANODE
DUAL, IN SERIES
MARKING CODE: L20
MARKING CODE: L22
MARKING CODE: L21
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
90
250
600
600
6.0
1.0
350
-65 to +150
357
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
IR
BVR
VF
VF
VF
VF
VF
CT
trr
VR=90V
VR=90V, TA=150°C
IR=100μA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=400mA
VR=0, f=1.0MHz
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω
MAX
100
100
UNITS
nA
μA
V
V
V
V
V
V
pF
ns
90
0.75
0.84
0.90
1.00
1.25
35
50
R6 (25-January 2010)

CMPD1001_10 Related Products

CMPD1001_10 CMPD1001A CMPD1001S CMPD1001
Description SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE
Is it lead-free? - Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible incompatible
Maker - Central Semiconductor Central Semiconductor Central Semiconductor
Parts packaging code - SOT-23 SOT-23 SOT-23
package instruction - SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN
Contacts - 3 3 3
Reach Compliance Code - _compli _compli _compli
ECCN code - EAR99 EAR99 EAR99
Configuration - COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SINGLE
Diode component materials - SILICON SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1 V 1 V 1 V
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code - e0 e0 e0
Number of components - 2 2 1
Number of terminals - 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -65 °C -65 °C -65 °C
Maximum output current - 0.25 A 0.25 A 0.25 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation - 0.35 W 0.35 W 0.35 W
Certification status - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 90 V 90 V 90 V
Maximum reverse recovery time - 0.05 µs 0.05 µs 0.05 µs
surface mount - YES YES YES
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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