CMPD1001S datasheet, PDF - EEWORLD Datasheet

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CMPD1001S: DescriptionSURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE; CategoryDiscrete semiconductor diode; File Size525KB，3 Pages; ManufacturerCentral Semiconductor

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CMPD1001S Overview

SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE

CMPD1001S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SOT-23
package instruction	SOT-23, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.35 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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CMPD1001

CMPD1001A

CMPD1001S

SURFACE MOUNT

HIGH CURRENT

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD1001 series

types are silicon switching diodes manufactured by

the epitaxial planar process, designed for applications

requiring high current capability.

SOT-23 CASE

The following configurations are available:

CMPD1001

CMPD1001A

CMPD1001S

SINGLE

DUAL, COMMON ANODE

DUAL, IN SERIES

MARKING CODE: L20

MARKING CODE: L22

MARKING CODE: L21

SYMBOL

IFRM

IRRM

IFSM

TJ, Tstg

250

600

6.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Repetitive Reverse Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

BVR

trr

VR=90V

VR=90V, TA=150°C

IR=100μA

IF=10mA

IF=50mA

IF=100mA

IF=200mA

IF=400mA

VR=0, f=1.0MHz

IR=IF=30mA, Rec. to 3.0mA, RL=100Ω

MAX

100

UNITS

μA

0.75

0.84

0.90

1.00

1.25

R6 (25-January 2010)

CMPD1001S Related Products

	CMPD1001S	CMPD1001A	CMPD1001_10	CMPD1001
Description	SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE	SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE	SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE	SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE
Is it lead-free?	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	incompatible
Maker	Central Semiconductor	Central Semiconductor	-	Central Semiconductor
Parts packaging code	SOT-23	SOT-23	-	SOT-23
package instruction	SOT-23, 3 PIN	SOT-23, 3 PIN	-	SOT-23, 3 PIN
Contacts	3	3	-	3
Reach Compliance Code	_compli	_compli	-	_compli
ECCN code	EAR99	EAR99	-	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	-	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	-	1 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e0	e0	-	e0
Number of components	2	2	-	1
Number of terminals	3	3	-	3
Maximum operating temperature	150 °C	150 °C	-	150 °C
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C
Maximum output current	0.25 A	0.25 A	-	0.25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum power dissipation	0.35 W	0.35 W	-	0.35 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Maximum repetitive peak reverse voltage	90 V	90 V	-	90 V
Maximum reverse recovery time	0.05 µs	0.05 µs	-	0.05 µs
surface mount	YES	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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