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CMPS5061_11

Description
SURFACE MOUNT SILICON CONTROLLED RECTIFIER
File Size332KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Compare View All

CMPS5061_11 Overview

SURFACE MOUNT SILICON CONTROLLED RECTIFIER

CMPS5061
CMPS5062
CMPS5063
CMPS5064
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPS5061 Series
types are epoxy molded PNPN Silicon Controlled
Rectifiers manufactured in an SOT-23 case, designed
for control systems and sensing circuit applications.
MARKING CODE: CMPS5061:
CMPS5062:
CMPS5063:
CMPS5064:
P2A
P2B
P2C
P2D
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Off-State Voltage
Peak Repetitive Reverse Voltage
RMS On-State Current
Average On-State Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VDRM
VRRM
IT(RMS)
IT(AV)
PD
TJ
Tstg
Θ
JA
CMPS5061 CMPS5062
100
200
100
200
CMPS5063 CMPS5064 UNITS
300
400
V
300
400
V
A
A
mW
°C
°C
°C/W
0.25
0.16
350
-65 to +125
-65 to +150
286
CMPS5061
MIN MAX
-
1.0
-
1.0
50
50
1.7
200
0.8
-
5.0
2.8 TYP
-
-
-
-
-
0.1
-
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL TEST CONDITIONS
IDRM
VD=Rated VDRM, RGK=1.0KΩ
IRRM
IDRM
IRRM
VTM
IGT
VGT
VGD
IH
ton
VD=Rated VDRM, RGK=1.0KΩ
VD=Rated VDRM, RGK=1.0KΩ,
VD=Rated VDRM, RGK=1.0KΩ,
IT=1.2A
VD=7.0V, RL=100Ω
VD=7.0V, RL=100Ω
VD= Rated VDRM, RL=100Ω, TC=125°C
RGK=1.0KΩ
VD= Rated VDRM, IGT=1.0mA,
RGK=1.0KΩ, di/dt=6.0A/μs
TC=125°C
TC=125°C
CMPS5062 CMPS5063 CMPS5064
MIN MAX MIN MAX MIN MAX UNITS
-
1.0
-
1.0
-
1.0
μA
-
-
-
-
-
-
0.1
-
1.0
50
50
1.7
200
0.8
-
5.0
2.8 TYP
-
-
-
-
-
-
0.1
-
1.0
50
50
1.7
200
0.8
-
5.0
2.8 TYP
-
-
-
-
-
-
0.1
-
1.0
50
50
1.7
200
0.8
-
5.0
2.8 TYP
μA
μA
μA
V
μA
V
V
mA
μs
R10 (11-February 2011)

CMPS5061_11 Related Products

CMPS5061_11 CMPS5063 CMPS5061 CMPS5062 CMPS5064
Description SURFACE MOUNT SILICON CONTROLLED RECTIFIER SURFACE MOUNT SILICON CONTROLLED RECTIFIER SURFACE MOUNT SILICON CONTROLLED RECTIFIER SURFACE MOUNT SILICON CONTROLLED RECTIFIER SURFACE MOUNT SILICON CONTROLLED RECTIFIER
Is it lead-free? - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible incompatible incompatible
Maker - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
package instruction - PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts - 3 3 3 3
Reach Compliance Code - unknow _compli unknow _compli
ECCN code - EAR99 EAR99 EAR99 -
Configuration - SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current - 0.2 mA 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage - 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current - 5 mA 5 mA 5 mA 5 mA
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code - e0 e0 e0 e0
Maximum leakage current - 0.05 mA 0.05 mA 0.05 mA -
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Maximum on-state current - 510 A 510 A 510 A 800 A
Maximum operating temperature - 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature - -65 °C -65 °C -65 °C -65 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current - 0.8 A 0.8 A 0.8 A 0.8 A
Off-state repetitive peak voltage - 300 V 100 V 200 V 400 V
Repeated peak reverse voltage - 300 V 100 V 200 V 400 V
surface mount - YES YES YES YES
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type - SCR SCR SCR SCR
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