CMPDM7002AG datasheet, PDF - EEWORLD Datasheet

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CMPDM7002AG: DescriptionSURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; CategoryDiscrete semiconductor The transistor; File Size334KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMPDM7002AG Overview

SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM7002AG Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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CMPDM7002A

CMPDM7002AG*

SURFACE MOUNT

N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPDM7002A

and CMPDM7002AG are special versions of the

2N7002 Enhancement-mode N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. These special devices offer low

rDS(ON) and low VDS (ON).

MARKING CODES: CMPDM7002A:

C702A

CMPDM7002AG*: 702G

SOT-23 CASE

*

Device is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VDS

VDG

VGS

ID

IS

IDM

ISM

PD

TJ, Tstg

Θ

JA

otherwise noted)

MIN

60

40

280

1.5

350

-65 to +150

357

MAX

100

1.0

500

UNITS

V

mA

A

mW

°C

°C/W

UNITS

nA

μA

mA

V

Ω

mS

pF

ns

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

IGSSF, IGSSR VGS=20V, VDS=0

IDSS

VDS=60V, VGS=0

IDSS

VDS=60V, VGS=0, TJ=125°C

ID(ON)

VGS=10V, VDS=10V

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

VDS(ON)

VGS=10V, ID=500mA

VDS(ON)

VGS=5.0V, ID=50mA

VSD

VGS=0, IS=400mA

rDS(ON)

VGS=10V, ID=500mA

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

rDS(ON)

VGS=5.0V, ID=50mA

VGS=5.0V, ID=50mA, TJ=125°C

rDS(ON)

gFS

VDS=10V, ID=200mA

Crss

VDS=25V, VGS=0, f=1.0MHz

Ciss

VDS=25V, VGS=0, f=1.0MHz

Coss

VDS=25V, VGS=0, f=1.0MHz

ton, toff

VDD=30V, VGS=10V, ID=200mA,

RG=25Ω, RL=150Ω

500

60

1.0

2.5

1.0

0.15

1.2

2.0

3.5

3.0

5.0

50

25

20

80

R4 (27-January 2010)

CMPDM7002AG Related Products

	CMPDM7002AG	CMPDM7002A_10
Description	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET	SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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