CMPDM202PH datasheet, PDF - EEWORLD Datasheet

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CMPDM202PH: DescriptionSURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET; CategoryDiscrete semiconductor The transistor; File Size347KB，3 Pages; ManufacturerCentral Semiconductor

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CMPDM202PH Overview

SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM202PH Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
Parts packaging code	SOT-23F
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	2.3 A
Maximum drain-source on-resistance	0.093 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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CMPDM202PH

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPDM202PH

is a High Current P-Channel Enhancement-mode

Silicon MOSFET, manufactured by the P-Channel

DMOS Process, and is designed for high speed pulsed

amplifier and driver applications. This MOSFET offers

High Current, Low rDS(ON), Low Threshold Voltage,

and Low Leakage Current.

MARKING CODE: 202C

SOT-23F CASE

APPLICATIONS:

•

Load/Power switches

•

Power supply converter circuits

•

Battery powered portable equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

FEATURES:

•

Low rDS(ON) (0.093Ω MAX @ VGS=2.5V)

•

High current (ID=2.3A)

•

Logic level compatibility

SYMBOL

VDS

VGS

ID

IDM

PD

TJ, Tstg

Θ

JA

20

12

2.3

9.2

350

-55 to +150

357

UNITS

V

A

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

I

GSSF, IGSSR

VGS=12V, VDS=0

IDSS

BVDSS

VGS(th)

rDS(ON)

gFS

Crss

Ciss

Coss

Qg(tot)

Qgs

Qgd

ton

toff

VDS=20V, VGS=0

VGS=0, ID=250μA

VGS=VDS, ID=250μA

VGS=5.0V, ID=1.2A

VGS=2.5V, ID=1.2A

VDS=5.0V, ID=2.3A

VDD=10V, VGS=0, f=1.0MHz

VDD=10V,

VGS=0, f=1.0MHz

VGS=5.0V, ID=2.3A

ID=2.3A

20

0.6

0.064

0.072

15

110

880

210

8.0

1.3

2.3

15.2

27.6

MAX

100

1.0

1.4

0.088

0.093

UNITS

nA

μA

V

Ω

S

pF

12

2.0

3.5

nC

ns

VDD=10V, VGS=5.0V,

VDD=10V, ID=2.3A, RG=10Ω

R0 (21-October 2010)

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