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2N5784

Description
Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size39KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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2N5784 Overview

Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

2N5784 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)15000 ns
Maximum opening time (tons)5000 ns
2N5784
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
SILICON EPITAXIAL
NPN TRANSISTOR
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
FEATURES
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
12.70
(0.500)
min.
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CER(sus)
V
CEO(sus)
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
STG
T
L
Collector – Base Voltage
Collector – Emitter Sustaining Voltage R
BE
= 100Ω
Collector – Emitter Sustaining Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Collector Current
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Total Device Dissipation
T
C
= 25°C
Derate above 25°C
Operating Junction and Storage Temperature Range
Lead temperature,
1
/
32
(0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3078
Issue 1

2N5784 Related Products

2N5784 2N5784-JQR-BR1 2N5784-JQR-B 2N5784R1
Description Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Small Signal Bipolar Transistor, 3.5A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Is it Rohs certified? incompatible conform to incompatible conform to
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3.5 A 3.5 A 3.5 A 3.5 A
Collector-emitter maximum voltage 65 V 65 V 65 V 65 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 4 4 4 4
JEDEC-95 code TO-39 TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz
Maximum off time (toff) 15000 ns 15000 ns 15000 ns 15000 ns
Maximum opening time (tons) 5000 ns 5000 ns 5000 ns 5000 ns
Base Number Matches - 1 1 1
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