Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1104 & SHF1104SMS
thru
SHF1110 & SHF1110SMS
1/
2/
DESIGNER’S DATA SHEET
Part Number/Ordering Information
SHF11 __ __ __
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
Screening
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
1 AMP
400 - 1000 V
Hyper Fast Rectifier
Features:
•
•
•
•
•
•
•
Hyper fast recovery: 40 nsec maximum
PIV to 1000 Volts, consult factory
Hermetically sealed
Void free construction
For high efficiency applications
Replaces UES 1104, UES1106, 1N6621-1N6625
2/
TX, TXV, and S level screening available
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
04 = 400 V
06 = 600 V
08 = 800 V
09 = 900 V
10 = 1000V
Maximum Ratings
SHF1104
SHF1106
SHF1108
SHF1109
SHF1110
Symbol
V
RRM
V
RSM
V
R
I
O
I
FSM
T
OP
& T
STG
Junction to Leads, L = 3/8
Junction to Tabs
R
θJE
Value
400
600
800
900
1000
1.0
20
-65 to +175
35
28
Units
Peak Repetitive Reverse and DC Blocking Voltage
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25
°C
)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°C
)
Operating & Storage Temperature
Maximum Thermal Resistance
NOTES:
1/
For ordering information, price, and availability - contact factory.
2/
Screening based on MIL-PRF-19500. Screening flows available on request.
Amps
Amps
ºC
ºC/W
SMS
Axial Lead Diode
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111G
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1104 & SHF1104SMS
thru
SHF1110 & SHF1110SMS
Symbol
SHF1104-1106
SHF1108-1110
SHF1104-1106
SHF1108-1110
Max
Units
Electrical Characteristic
Instantaneous Forward Voltage Drop
(I
F
= 1A
DC
, T
A
= 25ºC pulsed)
Instantaneous Forward Voltage Drop
(I
F
= 1A
DC
, T
A
= -55ºC pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC pulsed)
Reverse Recovery Time
(I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
= 25ºC)
Junction Capacitance
(V
R
= 10V
DC
, T
A
= 25ºC, f = 1MHz)
Case Outline:
(Axial)
V
F
V
F
1.35
1.65
1.50
1.80
10
1
40
22
DIM
A
B
C
D
MIN
0.100”
0.130”
0.027”
1.00”
V
DC
V
DC
µA
mA
nsec
pF
MAX
0.130”
0.180”
0.033”
--
I
R
I
R
t
RR
C
J
D
B
D
ØC
ØA
Case Outline:
(SMS)
B
A
DIM
A
B
C
D
A
MIN
0.127”
0.180”
0.020”
0.002”
MAX
0.140”
0.230”
0.030”
--
C
D
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111G
DOC
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