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SPW35N60CFD_08

Description
34.1 A, 600 V, 0.118 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
Categorysemiconductor    Discrete semiconductor   
File Size740KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SPW35N60CFD_08 Overview

34.1 A, 600 V, 0.118 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA

SPW35N60CFD_08 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage600 V
Processing package descriptionGREEN, PLASTIC, TO-247, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current34.1 A
Rated avalanche energy1300 mJ
Maximum drain on-resistance0.1180 ohm
Maximum leakage current pulse85 A
SPW35N60CFD
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
600
V
0.118
34
A
PG-TO247
Type
SPW35N60CFD
Package
PG-TO247
Ordering Code
Q67045A5053
Marking
35N60CFD
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
dv /dt
di /dt
V
GS
I
D
=34.1 A,
V
DS
=480 V,
T
j
=125 °C
I
S
=34.1 A,
V
DS
=480 V,
T
j
=125 °C
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Rev. 1.3
P
tot
T
j
,
T
stg
page 1
T
C
=25 °C
T
C
=25 °C
I
D
=10 A,
V
DD
=50 V
I
D
=20 A,
V
DD
=50 V
Value
34.1
21.6
85
1300
1
20
80
40
600
±20
±30
313
-55 ... 150
W
°C
2008-04-17
A
V/ns
V/ns
A/µs
V
mJ
Unit
A
Please note the new package dimensions arccording to PCN 2009-134-A
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