CMPT5087E_10 datasheet, PDF - EEWORLD Datasheet

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CMPT5087E_10: DescriptionENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; File Size337KB，3 Pages; ManufacturerCentral Semiconductor

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ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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CMPT5087E PNP

CMPT5088E NPN

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5087E

and CMPT5088E, are Silicon transistors in an epoxy

molded surface mount package with enhanced

specifications designed for applications requiring high

gain and low noise.

MARKING CODES: CMPT5087E: C2QE

CMPT5088E: C1QE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCBO

♦

BVCEO

VCB=20V

VEB=3.0V

IC=100µA

IC=1.0mA

IE=100µA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500µA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz

350

5.0

TYP

NPN PNP

MAX

UNITS

135

8.7

110

700

150

105

7.5

225

700

390

380

350

100

400

800

900

♦

BVEBO

♦

VCE(SAT)

♦

VCE(SAT)

♦♦

VBE(SAT)

♦

hFE

300

100

430

435

430

125

♦

hFE

♦♦

♦

Cob

Cib

hfe

MHz

4.0

1400

3.0

♦

Enhanced specification

♦♦

Additional Enhanced specification

R1 (1-February 2010)

CMPT5087E_10 Related Products

	CMPT5087E_10	CMPT5088E	CMPT5087E
Description	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor
package instruction	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	-	3	3
Reach Compliance Code	-	_compli	_compli
ECCN code	-	EAR99	EAR99
Other features	-	LOW NOISE	LOW NOISE
Maximum collector current (IC)	-	0.1 A	0.1 A
Collector-emitter maximum voltage	-	50 V	50 V
Configuration	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	50	50
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e0	e0
Number of components	-	1	1
Number of terminals	-	3	3
Maximum operating temperature	-	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	PNP
Certification status	-	Not Qualified	Not Qualified
surface mount	-	YES	YES
Terminal surface	-	TIN LEAD	TIN LEAD
Terminal form	-	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	SILICON
Nominal transition frequency (fT)	-	100 MHz	100 MHz

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