CMPT5088E datasheet, PDF - EEWORLD Datasheet

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CMPT5088E: DescriptionENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size337KB，3 Pages; ManufacturerCentral Semiconductor

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CMPT5088E Overview

ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPT5088E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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CMPT5087E PNP

CMPT5088E NPN

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5087E

and CMPT5088E, are Silicon transistors in an epoxy

molded surface mount package with enhanced

specifications designed for applications requiring high

gain and low noise.

MARKING CODES: CMPT5087E: C2QE

CMPT5088E: C1QE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

IEBO

BVCBO

♦

BVCEO

VCB=20V

VEB=3.0V

IC=100µA

IC=1.0mA

IE=100µA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500µA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz

350

5.0

TYP

NPN PNP

MAX

UNITS

135

8.7

110

700

150

105

7.5

225

700

390

380

350

100

400

800

900

♦

BVEBO

♦

VCE(SAT)

♦

VCE(SAT)

♦♦

VBE(SAT)

♦

hFE

300

100

430

435

430

125

♦

hFE

♦♦

♦

Cob

Cib

hfe

MHz

4.0

1400

3.0

♦

Enhanced specification

♦♦

Additional Enhanced specification

R1 (1-February 2010)

CMPT5088E Related Products

	CMPT5088E	CMPT5087E_10	CMPT5087E
Description	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	-	incompatible
Maker	Central Semiconductor	-	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3
Reach Compliance Code	_compli	-	_compli
ECCN code	EAR99	-	EAR99
Other features	LOW NOISE	-	LOW NOISE
Maximum collector current (IC)	0.1 A	-	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	50	-	50
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e0	-	e0
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	NPN	-	PNP
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	YES
Terminal surface	TIN LEAD	-	TIN LEAD
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz

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