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CMST3904

Description
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size411KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CMST3904 Overview

SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMST3904 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns
CMST3904 NPN
CMST3906 PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3904,
CMST3906 types are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for small signal general purpose amplifier and
switching applications.
MARKING CODES: CMST3904: 1AC
CMST3906: 2AC
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
CMST3904
60
40
6.0
200
275
CMST3906
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
-65 to +150
455
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
CMST3904
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
MIN
-
60
40
6.0
-
-
0.65
-
40
70
100
60
30
300
MAX
50
-
-
-
0.20
0.30
0.85
0.95
-
-
300
-
-
-
CMST3906
MIN
-
40
40
5.0
-
-
0.65
-
60
80
100
60
30
250
MAX
50
-
-
-
0.25
0.40
0.85
0.95
-
-
300
-
-
-
MHz
UNITS
nA
V
V
V
V
V
V
V
R4 (10-June 2010)

CMST3904 Related Products

CMST3904 CMST3904_10 CMST3906
Description SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free? Contains lead - Contains lead
Is it Rohs certified? incompatible - incompatible
Maker Central Semiconductor - Central Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Contacts 3 - 3
Reach Compliance Code _compli - _compli
ECCN code EAR99 - EAR99
Maximum collector current (IC) 0.2 A - 0.2 A
Collector-emitter maximum voltage 40 V - 40 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 30 - 30
JESD-30 code R-PDSO-G3 - R-PDSO-G3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN - PNP
Maximum power dissipation(Abs) 0.25 W - 0.25 W
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 300 MHz - 250 MHz
Maximum off time (toff) 250 ns - 300 ns
Maximum opening time (tons) 70 ns - 70 ns
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