CMST3906 datasheet, PDF - EEWORLD Datasheet

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CMST3906: DescriptionSURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size411KB，3 Pages; ManufacturerCentral Semiconductor

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CMST3906 Overview

SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMST3906 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	300 ns
Maximum opening time (tons)	70 ns

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CMST3904 NPN

CMST3906 PNP

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST3904,

CMST3906 types are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package,

designed for small signal general purpose amplifier and

switching applications.

MARKING CODES: CMST3904: 1AC

CMST3906: 2AC

SOT-323 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

CMST3904

6.0

200

275

CMST3906

5.0

UNITS

°C

°C/W

-65 to +150

455

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

CMST3904

SYMBOL

ICEV

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

TEST CONDITIONS

VCE=30V, VEB=3.0V

IC=10μA

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

VCE=1.0V, IC=0.1mA

VCE=1.0V, IC=1.0mA

VCE=1.0V, IC=10mA

VCE=1.0V, IC=50mA

VCE=1.0V, IC=100mA

VCE=20V, IC=10mA, f=100MHz

MIN

6.0

0.65

100

300

MAX

0.20

0.30

0.85

0.95

300

CMST3906

MIN

5.0

0.65

100

250

MAX

0.25

0.40

0.85

0.95

300

MHz

UNITS

R4 (10-June 2010)

CMST3906 Related Products

	CMST3906	CMST3904_10	CMST3904
Description	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	-	incompatible
Maker	Central Semiconductor	-	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3
Reach Compliance Code	_compli	-	_compli
ECCN code	EAR99	-	EAR99
Maximum collector current (IC)	0.2 A	-	0.2 A
Collector-emitter maximum voltage	40 V	-	40 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	30	-	30
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
JESD-609 code	e0	-	e0
Number of components	1	-	1
Number of terminals	3	-	3
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Polarity/channel type	PNP	-	NPN
Maximum power dissipation(Abs)	0.25 W	-	0.25 W
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	YES
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	250 MHz	-	300 MHz
Maximum off time (toff)	300 ns	-	250 ns
Maximum opening time (tons)	70 ns	-	70 ns

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