CMUT5088E datasheet, PDF - EEWORLD Datasheet

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CMUT5088E: DescriptionENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size354KB，3 Pages; ManufacturerCentral Semiconductor

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CMUT5088E Overview

ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMUT5088E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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CMUT5087E PNP

CMUT5088E NPN

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT5087E and

CMUT5088E are Silicon transistors in an ULTRAmini™

surface mount package with enhanced specifications

designed for applications requiring high gain and low

noise.

MARKING CODES: CMUT5087E: U87

CMUT5088E: U88

SOT-523 CASE

MAXIMUM RATINGS:

(TA=25°C)

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

ICBO

IEBO

♦

BVCBO

♦

BVCEO

TEST CONDITIONS

VCB=20V

VEB=3.0V

IC=100µA

IC=1.0mA

IE=100µA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500µA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V,

IC=1.0mA, f=1.0kHz

IC=100μA, RS=10kΩ f=10Hz to 15.7kHz

MIN

TYP

NPN PNP

MAX

5.0

135

8.7

110

700

430

435

430

125

150

105

7.5

225

700

390

380

350

4.0

350

3.0

1400

MHz

100

400

800

900

UNITS

♦

BVEBO

♦

VCE(SAT)

♦♦

VCE(SAT)

VBE(SAT)

♦

hFE

♦

hFE

♦♦

hFE

♦

Cob

Cib

hfe

300

100

♦

Enhanced specification

♦♦

Additional Enhanced specification

R2 (9-February 2010)

CMUT5088E Related Products

	CMUT5088E	CMUT5087E	CMUT5087E_10
Description	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	incompatible	-
Maker	Central Semiconductor	Central Semiconductor	-
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	-
Contacts	3	3	-
Reach Compliance Code	_compli	_compli	-
ECCN code	EAR99	EAR99	-
Other features	LOW NOISE	LOW NOISE	-
Maximum collector current (IC)	0.1 A	0.1 A	-
Collector-emitter maximum voltage	50 V	50 V	-
Configuration	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	50	50	-
JESD-30 code	R-PDSO-F3	R-PDSO-F3	-
JESD-609 code	e0	e0	-
Number of components	1	1	-
Number of terminals	3	3	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	NPN	PNP	-
Maximum power dissipation(Abs)	0.35 W	0.35 W	-
Certification status	Not Qualified	Not Qualified	-
surface mount	YES	YES	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	FLAT	FLAT	-
Terminal location	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	-
Nominal transition frequency (fT)	100 MHz	100 MHz	-

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