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CMXT3946_10

Description
SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS
File Size560KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet View All

CMXT3946_10 Overview

SURFACE MOUNT DUAL COMPLEMENTARY SILICON TRANSISTORS

CMXT3946
SURFACE MOUNT
DUAL COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT3946 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, and designed
for small signal general purpose and switching
applications.
MARKING CODE: X46
SOT-26 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
NPN
60
40
6.0
200
350
-65 to +150
357
PNP
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
hre
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
VCE=1.0V,
IC=0.1mA
IC=1.0mA
IC=10mA
IC=50mA
MIN
-
60
40
6.0
-
-
0.65
-
40
70
100
60
30
300
-
-
1.0
0.5
MAX
50
-
-
-
0.20
0.30
0.85
0.95
-
-
300
-
-
-
4.0
8.0
10
8.0
MIN
-
40
40
5.0
-
-
0.65
-
60
80
100
60
30
250
-
-
2.0
0.1
MAX
50
-
-
-
0.25
0.40
0.85
0.95
-
-
300
-
-
-
4.5
10
12
10
MHz
pF
pF
x10
-4
UNITS
nA
V
V
V
V
V
V
V
VCE=1.0V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
R3 (12-February 2010)
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