TO
-22
0A
B
BUK7516-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
V
65.7 A
138
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 49 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
120
mJ
-
-
32
mΩ
-
13
16
mΩ
NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7516-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
T
mb
= 25 °C
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
Max
55
55
20
65.7
46.5
263
138
175
175
65.7
Unit
V
V
V
A
A
A
W
°C
°C
A
Limiting values
Source-drain diode
BUK7516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 January 2011
2 of 13
NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
SM
E
DS(AL)S
Parameter
peak source current
non-repetitive drain-source
avalanche energy
Conditions
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
Min
-
-
Max
263
120
Unit
A
mJ
Table 4.
Limiting values
…continued
Avalanche ruggedness
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nc01
R
DSon
= V
DS
/ I
D
t
p
= 10
μs
100
μs
t
p
T
10
P
δ
=
1 ms
D.C.
10 ms
100 ms
t
p
T
t
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 January 2011
3 of 13
NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
1.1
Unit
K/W
R
th(j-a)
vertical in still air
-
60
-
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
10
−2
Single Shot
t
p
P
03nc00
δ
=
t
p
T
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
DSS
I
GSS
drain leakage current
gate leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
Min
55
50
1
-
2
-
-
-
-
Typ
-
-
-
-
3
0.05
-
2
2
Max
-
-
-
4.4
4
10
500
100
100
Unit
V
V
V
V
V
µA
µA
nA
nA
Static characteristics
BUK7516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 January 2011
4 of 13
NXP Semiconductors
BUK7516-55A
N-channel TrenchMOS standard level FET
Table 6.
Symbol
R
DSon
Characteristics
…continued
Parameter
drain-source on-state
resistance
Conditions
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Min
-
-
Typ
-
13
Max
32
16
Unit
mΩ
mΩ
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from contact screw on mounting base to
centre of die ; T
j
= 25 °C
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
-
1580
370
220
16
70
57
41
3.5
4.5
7.5
2245
423
312
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
48
106
1.2
-
-
V
ns
nC
250
I
D
(A)
200
V
GS
(V) = 20
03na36
03na34
R
DSon
40
(mΩ)
35
10
9
30
25
20
15
10
5
0
150
8
100
7
6
50
5
0
0
2
4
6
8
V
DS
(V)
10
4
6
8
10
12
14
16
18
V
GS
(V)
20
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 January 2011
5 of 13
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