CZSH5-40C datasheet, PDF - EEWORLD Datasheet

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CZSH5-40C: Description2.5 A, 40 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size371KB，3 Pages; ManufacturerCentral Semiconductor

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CZSH5-40C Overview

2.5 A, 40 V, SILICON, RECTIFIER DIODE

CZSH5-40C Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
Parts packaging code	SOT-223
package instruction	SOT-223, 4 PIN
Contacts	4
Reach Compliance Code	compli
application	POWER
Minimum breakdown voltage	40 V
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	75 A
Number of components	2
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	2.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	40 V
Maximum reverse current	3000 µA
Reverse test voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL

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CZSH5-40C

SURFACE MOUNT

DUAL, COMMON CATHODE SILICON

SCHOTTKY POWER RECTIFIER

5 AMP, 40 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZSH5-40C

is manufactured with two 5 Amp Schottky rectifiers

assembled in a common cathode configuration and

packaged in a SOT-223 case. This device has been

designed for use in all types of commercial, industrial,

entertainment, computer and automotive applications

which require a high current device.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current (TA=75°C)

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

VRRM

VR(RMS)

IFSM

TJ, Tstg

125

-65 to +150

UNITS

°C

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MAX

VR=40V

VR=40V, TA=100°C

IF=5.0A

3.0

0.55

UNITS

R0 (5-October 2010)

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