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5962R0821801V2A

Description
Aerospace Low Distortion Fully Differential RF / IF Amplifier
CategoryOther integrated circuit (IC)    Consumption circuit   
File Size309KB,21 Pages
ManufacturerADI
Websitehttps://www.analog.com
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Aerospace Low Distortion Fully Differential RF / IF Amplifier

5962R0821801V2A Parametric

Parameter NameAttribute value
Brand NameAnalog Devices Inc
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerADI
Parts packaging codeQLCC
package instructionQCCN,
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
Commercial integrated circuit typesCONSUMER CIRCUIT
JESD-30 codeS-CQCC-N20
JESD-609 codee0
Number of functions1
Number of terminals20
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeSQUARE
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
Filter levelMIL-PRF-38535 Class V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)3 V
surface mountYES
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
total dose100k Rad(Si) V

5962R0821801V2A Preview

REVISIONS
LTR
A
Add device type 02. - ro
DESCRIPTION
DATE (YR-MO-DA)
12-08-01
APPROVED
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
A
15
A
16
A
17
A
18
REV
SHEET
PREPARED BY
RICK OFFICER
A
19
A
20
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
10-02-17
REVISION LEVEL
A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, DIFFERENTIAL AMPLIFIER,
MONOLITHIC SILICON
SIZE
A
CAGE CODE
AMSC N/A
67268
SHEET
1 OF 20
5962-08218
DSCC FORM 2233
APR 97
5962-E367-12
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
08218
01
V
2
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01 1/
02 1/
Generic number
AD8351
AD8351
Circuit function
Radiation hardened differential amplifier
Radiation hardened differential amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
2
Descriptive designator
CQCC1-N20
Terminals
20
Package style
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
_____
1/ Meets the performance requirements of Table I as long as section 6.7 is followed.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-08218
SHEET
A
2
1.3 Absolute maximum ratings. 2/
Positive supply voltage (VPOS) ................................................................................................... 6 V
Power up voltage (PWUP) ........................................................................................................... VPOS
Internal power dissipation (P
D
) .................................................................................................... 320 mW
Maximum junction temperature (T
J
) ............................................................................................. +175°C
Operating temperature range (T
A
) ............................................................................................... -55°C to +125°C
Storage temperature range .......................................................................................................... -65°C to +150°C
Lead temperature range (soldering, 60 seconds) ........................................................................ +300°C
Thermal resistance, junction-to-case (θ
JC
) .................................................................................. 97°C/W 3/
Thermal resistance, junction-to-ambient (θ
JA
) ............................................................................. 110°C/W 4/
1.4 Recommended operating conditions.
Positive supply voltage (VPOS) ................................................................................................... 3 V to 5.5 V
Ambient operating temperature range (T
A
) .................................................................................. -55°C to +125°C
1.4.1 Operating performance characteristics. 5/
Input resistance (R
IN
) .................................................................................................................. 5 kΩ
Input capacitance (C
IN
) ............................................................................................................... 0.8 pF
Output resistance (R
OUT
) ............................................................................................................ 150
Output capacitance (C
OUT
) ......................................................................................................... 0.8 pF
Slew rate (SR) ............................................................................................................................. 13000 V /
µs
Second harmonic distortion (R
L
= 150
Ω,
f = 10 MHz) ................................................................ -80 dBc
Third harmonic distortion (R
L
= 150
Ω,
f = 10 MHz) .................................................................... -61 dBc
Third order intermodulation distortion (IMD) (R
L
= 150
Ω,
f1 = 9.5 MHz, f2 = 10.5 MHz) ............. -68 dBc
Noise spectral density (RTI) (f = 10 MHz) .................................................................................... 2.65 nV/ Hz
Second harmonic distortion (R
L
= 150
Ω,
f = 70 MHz) ................................................................ -62 dBc
Third harmonic distortion (R
L
= 150
Ω,
f = 70 MHz) .................................................................... -66 dBc
Third order intermodulation distortion (IMD) (R
L
= 150
Ω,
f1 = 69.5 MHz, f2 = 70.5 MHz) .......... -64 dBc
Noise spectral density (RTI) (f = 70 MHz) .................................................................................... 2.7 nV/ Hz
Second harmonic distortion (R
L
= 150
Ω,
f = 140 MHz) .............................................................. -51 dBc
Third harmonic distortion (R
L
= 150
Ω,
f = 140 MHz) .................................................................. -52 dBc
Third order intermodulation distortion (IMD) (R
L
= 150
Ω,
f1 = 139.5 MHz, f2 = 140.5 MHz) ...... -64 dBc
Noise spectral density (RTI) (f = 140 MHz) .................................................................................. 2.75 nV/ Hz
Second harmonic distortion (R
L
= 150
Ω,
f = 240 MHz) .............................................................. -38 dBc
Third harmonic distortion (R
L
= 150
Ω,
f = 240 MHz) .................................................................. -49 dBc
Third order intermodulation distortion (IMD) (R
L
= 150
Ω,
f1 = 239.5 MHz, f2 = 240.5 MHz) ....... -61 dBc
Noise spectral density (RTI) (f = 240 MHz) .................................................................................. 2.9 nV/ Hz
_____
2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
3/ Measurement taken under absolute worst case conditions. Data taken with a thermal camera for highest power density
location. See MIL-STD-1835 for average package thermal numbers.
4/ Measurement taken under absolute worst case conditions. Data taken with a thermal camera for highest power density
location.
5/ Unless otherwise specified, VPOS = 5 V, PWUP = VPOS, load resistance (R
L
) = 1 kΩ, gain resistance (R
G
) = 200
Ω,
gain (A
V
) = 10 dB, f = 70 MHz, and T
A
= +25°C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-08218
SHEET
A
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01 .......................................................................................................................... 100 krads(Si) 6/
Maximum total dose available (dose rate
10 mrads(Si)/s):
Device type 02 .......................................................................................................................... 50 krads(Si) 7/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch/
or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
______
6/
Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions specified in
MIL-STD-883 method 1019, condition D.
7/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-08218
SHEET
A
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Block diagram. The block diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-08218
SHEET
A
5
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