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BFL4004

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
CategoryDiscrete semiconductor    The transistor   
File Size320KB,6 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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BFL4004 Overview

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BFL4004 Parametric

Parameter NameAttribute value
MakerSANYO
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)241 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)4.3 A
Maximum drain current (ID)4.3 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)36 W
Maximum pulsed drain current (IDM)13 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Ordering number : ENA1796
BFL4004
SANYO Semiconductors
DATA SHEET
BFL4004
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)=1.9
Ω
(typ.)
Input capacitance Ciss=710pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
Conditions
Ratings
800
±30
6.5
4.3
13
2.0
36
150
--55 to +150
241
6.5
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=99V, L=10mH, IAV=6.5A (Fig.1)
*5
L
10mH, single pulse
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
3.5
7.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
16.1
16.0
FL4004
LOT No.
0.9
1.2
0.75
14.0
0.6
3.6
1.2
0.7
1
1 2 3
2.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
3
2.55
2.55
http://semicon.sanyo.com/en/network
70710QB TK IM TC-00002398 No. A1796-1/5

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