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Datasheet> All Categories > Wireless rf/communication> Radio frequency and microwave> LX5512BLQTR
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LX5512BLQTR

Description
2400MHz - 2500MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLASTIC, MLPQ-16
CategoryWireless rf/communication    Radio frequency and microwave   
File Size175KB，6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

LX5512BLQTR Overview

2400MHz - 2500MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, 3 X 3 MM, LEAD FREE, PLASTIC, MLPQ-16

LX5512BLQTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Reach Compliance Codeunknown
structureCOMPONENT
Gain32 dB
Maximum input power (CW)5 dBm
JESD-609 codee3
Maximum operating frequency2500 MHz
Minimum operating frequency2400 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND HIGH POWER
Terminal surfaceMATTE TIN

LX5512BLQTR Preview

LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4-2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current I
CQ
~65mA
Power Gain ~ 32 dB at
2.45GHz & Pout=19dBm
Total Current ~140mA for
Pout=19dBm at 2.45 GHz
OFDM
EVM ~3 % for 64QAM/ 54Mbps
& Pout=19dBm
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS
The LX5512B is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range.
The PA is implemented as a three-
stage
monolithic
microwave
integrated circuit (MMIC) with active
bias and input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor
(HBT)
IC
process
(MOCVD). It operates at a single
low voltage supply of 3.3V with 32
dB power gain between 2.4-2.5GHz,
at a low quiescent current of 65mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3%, and consumes 140mA total DC
current.
The LX5512B is available in a 16-
pin 3mmx3mm micro-lead package
(MLP). The compact footprint, low
profile, and excellent thermal capability
of LX5512B meets the requirements of
high-gain power amplifiers for IEEE
802.11b/g applications.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
LX5512BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5512BLQTR)
This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)
testing. Appropriate ESD procedures should be observed when handling this device.
LX5512B
LX5512B
Copyright
©
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off......................................................................................................7V
Collector Current..............................................................................................................500mA
Total Power Dissipation ......................................................................................................... 2W
RF Input Power .................................................................................................................. 5dBm
o
Operation Ambient Temperature ............................................................................ -40 to +85 C
o
Storage Temperature............................................................................................ -60 to +150 C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure)..........255°C(+5, -0)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
PACKAGE PIN OUT
WWW .
Microsemi
.C
OM
VC2
13
14
15
VC3
RF OUT
RF OUT
DET
VC1
16
1
2
N/C
N/C
12
11
10
9
8
7
6
5
N/C
N/C
RF IN
N/C
e
3
4
THERMAL DATA
LQ P
ACKAGE
(Bottom View)
LQ
Plastic MLPQ 16-Pin
10°C/W
50°C/W
Pb-free 100% Matte Tin Lead Finish
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
θ
JC
THERMAL RESISTANCE
-
JUNCTION TO
A
MBIENT
,
θ
JA
Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
The
θ
JA
numbers are guidelines for the thermal performance of the device/pc-board system. All of the
above assume no ambient airflow.
FUNCTIONAL PIN DESCRIPTION
Name
RF IN
VB12
VB3
VCC
RF OUT
VC1
VC2
VC3
REF
DET
GND
Description
RF input for the power amplifier. This pin is directly connected to base, a 10pF decoupling capacitor may be
needed.
Bias current control voltage for the first and second stage.
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB12) into a single reference voltage (referred to as V
REF
) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10nF
bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a
single supply voltage (referred to as V
C
).
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.
Power supply for first stage amplifier. The VC1 feed line should be terminated with a 10pF bypass capacitor,
followed by a 36 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single
supply voltage (referred to as V
C
).
Power supply for second stage amplifier. The VC2 feed line should be terminated with a 18pF bypass capacitor.
This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as V
C
).
Power supply for the third stage amplifier. The VC3 feed line should be terminated with 27 pF and 10 nF bypass
capacitors. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as V
C
).
Power detector reference output pin should be terminated with a 100K
Ω
loading resistor
Power detector output pin should be terminated with a 100K
Ω
loading resistor
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
VB12
VCC
REF
VB3
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
Copyright
©
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
Test conditions: V
C
= 3.3V, V
REF
Parameter
ELECTRICAL CHARACTERISTICS
= 2.95V, I
CQ
= 65mA, T
A
= 25°C
Symbol
f
Gp
64QAM / 54Mbps
I
C_TOTAL
I
CQ
I
REF
S21
∆S21
∆S21
S11
S22
S12
WWW .
Microsemi
.C
OM
Test Conditions
LX5512B
Min
Typ
Max
2.4
32
3.0
140
65
1.8
32
±0.25
±0.25
10
10
45
-40
-40
215
-55
2.5
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Frequency Range
Power Gain @ P
OUT
= 19dBm
EVM @ P
OUT
= 19dBm
Total Current @ P
OUT
= 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current @ P
OUT
= 23dBm
nd
2 Side Lobe @ 23dBm
Ramp-On Time
Differential Detector Response
For I
CQ
= 65mA
Over 100MHz
0 to +85°C
t
ON
P
OUT
= 19dBm
P
OUT
= 19dBm
11Mbps CCK
11Mbps CCK
10 ~ 90%
19dBm OFDM
100
1.4
Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.
E
LECTRICALS
E
LECTRICALS
Copyright
©
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
S-PARAMETER DATA
50
40
30
20
10
0
m3
m2
m1
Freq = 2.40GHz
m1 = 32.02
m2
Freq = 2.50GHz
m2 = 31.46
m3
Freq = 2.45GHz
m3 = -9.31
EVM & SUPPLY CURRENT
7
6
Current 3.3V
EVM PA ONLY
175
150
WWW .
Microsemi
.C
OM
dB(S(2,2))
dB(S(2,1))
m1
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18 20 22
100
75
50
25
0
dB(S(1,1))
dB(S(1,2))
-10
-20
-30
-40
-50
0
1
2
3
4
5
6
7
Frequency (GHz)
V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA
Output Power /[dBm]
EVM and Supply Current with 54Mbps 64QAM
V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA, Frequency = 2.45GHz
ACP & DIFF DETECTOR VOLTAGE
-44
-46
-48
ACP 30MHz
Diff DET Voltage
CURRENT @ 11MBPS CCK
3.0
2.5
250
225
200
Current 3.3V
Current /[mA]
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
22
175
150
125
100
75
50
25
0
0
2
4
6
8
10
12
14
16
18
20
22
24
ACP /[dB]
-50
-52
-54
-56
Output Power /[dBm]
ACP (30MHz) & Differential Detector Voltage with 54Mbps 64QAM
V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA, Frequency = 2.45GHz
Output Power /[dBm]
V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA, Frequency = 2.45GHz
23DBM OUTPUT @ 11MBPS CCK
Current /[mA]
EVM PA /[%]
5
125
C
HARTS
C
HARTS
V
C
= 3.3V, V
REF
= 2.95V, I
CQ
= 65mA, Frequency = 2.45GHz
Copyright
©
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5512B
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
PACKAGE DIMENSIONS
WWW .
Microsemi
.C
OM
LQ
16-Pin MLPQ 3x3 (67x67 mil DAP)
D
b
E
D2
E2
e
A1
A3
Dim
A
A1
A3
b
D
E
e
D2
E2
K
L
M
ILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.30
1.55
1.30
1.55
0.2
-
0.35
0.50
I
NCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.051
0.061
0.051
0.061
0.008
-
0.012
0.020
K
L
A
M
ECHANICALS
M
ECHANICALS
Copyright
©
2004
Rev. 1.0, 2004-06-23
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
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