A Product Line of
Diodes Incorporated
ZXGD3005E6
25V 10A GATE DRIVER IN SOT26
ADVANCE INFORMATION
Description and Applications
The ZXGD3005E6 is a high-speed non-inverting single gate driver
capable of driving up to 10A into a MOSFET or IGBT gate capacitive
load from supply voltages up to 25V. With propagation delay times
down to <10ns and correspondingly rise/fall times of <20ns.
This gate driver ensures rapid switching of the MOSFET or IGBT to
minimize power losses and distortion in high current switching
applications. It is ideally suited to act as a voltage buffer between the
typically high output impedances of a controller IC and the effectively
low impedance on the gate of a power MOSFET or IGBT during
switching. Its low input voltage requirement and high current gain
allows high current driving from low voltage controller ICs.
The ZXGD3005E6 has separate source and sink outputs that enables
the turn-on and turn-off times of the MOSFET or IGBT to be
independently controlled. In addition, the wide supply voltage range
allows full enhancement of the MOSFET or IGBT to minimize on-state
losses and permits +15V to -5V gate drive voltage to prevent dV/dt
induced false triggering of IGBTs. The ZXGD3005E6 has been
designed to be inherently rugged to latch-up and shoot-through
issues. The optimized pin-out SOT26 package eases board layout,
enabling reduced parasitic inductance of traces.
Power MOSFET and IGBT Gate Driving in:
•
Synchronous switch-mode power supplies
•
Power Factor Correction (PFC) in power supplies
•
Secondary side synchronous rectification
•
Plasma Display Panel power modules
•
1, 2 and 3-phase motor control circuits
•
Audio switching amplifier power output stages
•
Solar inverters
Features and Benefits
•
•
•
•
•
•
•
•
•
•
•
•
Emitter-follower configuration for ultra-fast switching
•
<10ns propagation delay time
•
<20ns rise/fall time
Non-inverting voltage buffer stage
Wide supply voltage up to 25V to minimize on-losses
10A peak current drive into capacitive loads
Low input current of 1mA to deliver 4A output current
Separate source and sink outputs for independent control of rise
and fall time
Optimized pin-out to ease board layout and minimize parasitic
inductance of traces
Rugged design that avoids latch-up or shoot-through issues
Near - Zero quiescent supply current
“Lead-Free”, RoHS Compliant (Note 1)
“Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT26
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.018 grams (approximate)
SOT26
V
CC
IN
V
EE
Source
Do Not Connect
Sink
Pin Name
V
CC
IN
V
EE
SOURCE
SINK
Pin Function
Supply voltage high
Driver input pin
Supply voltage low
Source current output
Sink current output
1
Top View
Top View
Pin-Out
Ordering Information
(Note 3)
Product
ZXGD3005E6TA
Notes:
Marking
3005
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
3005
3005 = Product Type Marking Code
ZXGD3005E6
Document Number DS35095
Rev. 4 – 2
1 of 8
www.diodes.com
March 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXGD3005E6
ADVANCE INFORMATION
Typical Application Circuit
V
S
V
CC
V
CC
Controller IC
SOURCE R
SOURCE
IN
ZXGD3005
SINK
R
SINK
V
EE
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Supply voltage, with respect to V
EE
Input voltage, with respect to V
EE
Output difference voltage (Source – Sink)
Peak output current
Input current
Symbol
V
CC
V
IN
ΔV
(source-sink)
I
PK
I
IN
Value
25
25
±7.5
±10
±100
Unit
V
V
V
A
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Notes 4 & 5)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 4 & 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1.1
8.8
113
105
-55 to +150
Unit
W
mW/°C
°C/W
°C
4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (V
CC
) and pin 3 (V
EE
) connected separately to each half.
5. For device with two active die running at equal power.
6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (V
CC
) and pin 3 (V
EE
).
ZXGD3005E6
Document Number DS35095
Rev. 4 – 2
2 of 8
www.diodes.com
March 2011
© Diodes Incorporated
Embedded System
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