MCP14E6/7/8
2.0A Dual High-Speed Power MOSFET Driver With Enable
Features
• High Peak Output Current: 2.0A (typical)
• Independent Enable Function for Each Driver
Output
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- t
R
: 12 ns with 1000 pF load (typical)
- t
F
: 15 ns with 1000 pF load (typical)
• Short Delay Times: 45 ns (typical)
• Low Supply Current:
- With Logic ‘1’ Input/Enable – 1 mA (typical)
- With Logic ‘0’ Input/Enable – 300 µA (typical)
• Latch-up Protected: Passed JEDEC JESD78A
• Logic Input will Withstand Negative Swing,
up to 5V
• Space-Saving Packages:
- 8-Lead SOIC, PDIP, 6x5 DFN
General Description
The MCP14E6/7/8 devices are high-speed MOSFET
drivers, capable of providing 2.0A of peak current. The
dual inverting, dual non-inverting and complementary
outputs are directly controlled from either TTL or
CMOS (3V to 18V). These devices also feature low
shoot-through current, fast rise/fall times and
propagation delays, which make them ideal for high
switching frequency applications.
The MCP14E6/7/8 devices operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 1000 pF of MOSFET gate capacitance. They
provide low enough impedances, in both the ON and
OFF states, to ensure the MOSFETs’ intended state
will not be affected, even by large transients.
The additional control of the MCP14E6/7/8 outputs is
allowed by the use of separate enable functions. The
ENB_A and ENB_B pins are active-high and are
internally pulled up to V
DD
. The pins may be left floating
for standard operation.
The MCP14E6/7/8 dual output, 2.0A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40
o
C to +125
o
C temperature rating.
The low thermal resistance of the thermally enhanced
DFN package allows greater power dissipation
capability for driving heavier capacitive or resistive
loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
The devices are fully latch-up protected when tested
according to JEDEC JESD78A. All terminals are fully
protected against Electrostatic Discharge (ESD), up to
4 kV (HBM) or 400V (MM).
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
©
2011 Microchip Technology Inc.
DS25006A-page 1
MCP14E6/7/8
Package Types
MCP14E7
PDIP, SOIC
ENB_A 1
IN A 2
GND 3
IN B 4
MCP14E6
8 ENB_B ENB_B
7 OUT A
6 V
DD
5 OUT B
OUT A
V
DD
OUT B
MCP14E8
6x5 DFN*
ENB_B
OUT A
V
DD
OUT B
ENB_A 1
IN A 2
GND 3
IN B 4
EP
9
8 ENB_B ENB_B
7 OUT A
6 V
DD
5 OUT B
OUT A
V
DD
OUT B
ENB_B
OUT A
V
DD
OUT B
MCP14E7
MCP14E6
MCP14E8
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
Functional Block Diagram
(1)
Inverting
V
DD
V
DD
Internal
Pull-up
Non-Inverting
Enable
Output
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7 V
4.7 V
MCP14E6
MCP14E7
MCP14E8
Dual Inverting
Dual Non-Inverting
One Inverting, One Non-Inverting
Note 1:
Unused inputs should be grounded.
DS25006A-page 2
©
2011 Microchip Technology Inc.
MCP14E6/7/8
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
DD
+ 0.3V) to (GND – 5V)
Enable Voltage .............................(V
DD
+ 0.3V) to (GND - 5V)
Input Current (V
IN
>V
DD
)................................................50 mA
Package Power Dissipation (T
A
= +50
o
C)
8L-DFN
........................................................................
Note 3
8L-PDIP ........................................................................1.12W
8L-SOIC .....................................................................669 mW
DC CHARACTERISTICS
(2)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Switching Time
(1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Enable Pin Leakage Current
Propagation Delay Time
Propagation Delay Time
Note 1:
2:
3:
t
R
t
F
t
D1
t
D2
V
EN_H
V
EN_L
V
HYST
R
ENBL
I
ENBL
t
D3
t
D4
—
—
—
—
2.4
—
—
0.7
—
—
—
12
15
45
45
1.6
1.2
400
1.6
10
35
35
30
35
55
55
—
0.8
—
3.0
—
65
65
ns
ns
ns
ns
V
V
mV
MΩ
µA
ns
ns
V
DD
= 14V, ENBL = GND
V
DD
= 12V,
ENB_A = ENB_B = GND
V
DD
= 12V,
Figure 4-3
V
DD
= 12V,
Figure 4-3
Figure 4-1, Figure 4-2,
C
L
= 1000 pF
Figure 4-1, Figure 4-2,
C
L
= 1000 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
DD
= 12V, Low-to-High Transition
V
DD
= 12V, High-to-Low Transition
V
OH
V
OL
R
OH
R
OL
I
PK
V
DD
– 0.025
—
—
—
—
—
—
5
5
2
—
0.025
8
8
—
V
V
Ω
Ω
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
=
18V
(2)
V
IH
V
IL
I
IN
V
IN
2.4
—
-1
-5
1.5
1.3
—
—
—
0.8
1
V
DD
+ 0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
Switching times are ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area of the PCB.
©
2011 Microchip Technology Inc.
DS25006A-page 3
MCP14E6/7/8
DC CHARACTERISTICS
(2)
(CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Power Supply
Supply Voltage
Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
2:
3:
4.5
—
—
—
—
—
—
—
—
—
1000
600
800
800
600
300
500
500
18.0
1800
900
1600
1600
1000
450
800
800
V
µA
µA
µA
µA
µA
µA
µA
µA
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
Sym
Min
Typ
Max
Units
Conditions
Switching times are ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area of the PCB.
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
(2)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Note 1:
2:
(1)
Sym
V
IH
V
IL
I
IN
V
OH
V
OL
R
OH
R
OL
t
R
t
F
t
D1
t
D2
Min
2.4
—
-10
V
DD
– 0.025
—
—
—
—
—
—
—
Typ
—
—
—
—
—
8
8
23
23
50
50
Max
—
0.8
+10
—
0.025
11
11
35
40
65
65
Units
V
V
µA
V
V
Ω
Ω
ns
ns
ns
ns
Conditions
0V
≤
V
IN
≤
V
DD
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Figure 4-1, Figure 4-2,
C
L
= 1000 pF
Figure 4-1, Figure 4-2,
C
L
= 1000 pF
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Switching times are ensured by design.
Tested during characterization, not production tested.
DS25006A-page 4
©
2011 Microchip Technology Inc.
MCP14E6/7/8
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
(2)
(CONTINUED)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Propagation Delay Time
Propagation Delay Time
Power Supply
Supply Voltage
Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
2:
4.5
—
—
—
—
—
—
—
—
—
1400
800
1300
1300
800
500
600
600
18.0
2200
1100
2000
2000
1200
600
900
900
V
µA
µA
µA
µA
µA
µA
µA
µA
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = High
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = High
V
IN_A
= 3V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 3V, V
IN_B
= 0V,
ENB_A = ENB_B = Low
V
IN_A
= 0V, V
IN_B
= 3V,
ENB_A = ENB_B = Low
Sym
V
EN_H
V
EN_L
V
HYST
R
ENBL
t
D3
t
D4
Min
2.4
—
—
0.7
—
—
Typ
—
—
0.4
1.6
60
70
Max
—
0.8
—
3.0
80
85
Units
V
V
V
MΩ
ns
ns
V
DD
= 14V,
ENB_A = ENB_B = GND
V
DD
= 12V,
Figure 4-3
V
DD
= 12V,
Figure 4-3
Conditions
V
DD
= 12V, Low-to-High Transition
V
DD
= 12V, High-to-Low Transition
Enable Function (ENB_A, ENB_B)
Switching times are ensured by design.
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
—
—
—
35.7
89.3
149.5
—
—
—
°C/W
°C/W
°C/W
Typical four-layer board with
vias to ground plane
T
A
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
©
2011 Microchip Technology Inc.
DS25006A-page 5
ARM Technology
京公网安备 11010802033920号
EEWORLD
