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CEDM8001VLTR

Description
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-883VL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CEDM8001VLTR Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-883VL, 3 PIN

CEDM8001VLTR Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionCHIP CARRIER, R-PBCC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeP-CHANNEL
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Product Brief
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel)
20V, 100mA, MOSFETs
in the very low profile SOT-883VL package
Central Semiconductor’s CEDM7001VL (N-Channel) and
CEDM8001VL (P-Channel) are Enhancement-mode MOSFETs
packaged in the very low profile SOT-883VL case. These devices
are designed for space constrained high speed amplifier and driver
applications where package height is a critical design element.
These MOSFETs offers low rDS(ON) and low gate charge.
SOT-883VL
Top View
Bottom View
Typical Electrical Characteristics
CEDM7001VL (N-Channel)
Features:
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
Applications:
• Load/Power switches
• DC-DC converters
• Power management
CEDM8001VL (P-Channel)
Benefits:
• High power density
• Very low package profile (0.32mm)
• Space saving surface mount package
Package Profile Comparison:
The SOT-883VL has a
46%
lower profile than the SOT-883 and
a
20%
lower profile than the SOT-883L.
0.6mm
0.4mm
0.32mm
SOT-883
SOT-883L
SOT-883VL
Electrical Characteristics:
(TA = 25˚C)
BVDSS
(V)
MIN
20
20
VGS(th)
(V)
MIN
0.6
0.6
MAX
0.9
1.1
r
DS(ON)
(Ω)
TYP
0.9
1.3
1.9
2.4
(Ω)
MAX
3.0
4.0
8.0
12
4.0
2.5
4.0
2.5
10
10
10
10
@ VGS
(V)
@ ID
(mA)
Qgs
(nC)
TYP
0.16
0.158
Ciss
(pF)
TYP
9.0
45
Crss
(pF)
TYP
4.0
15
Maximum Ratings
(TA = 25˚C)
Type No.
ID
(mA)
MAX
CEDM7001VL
CEDM8001VL
100
100
PD
(mW)
MAX
100
100
TJ, Tstg
(˚C)
MAX
-65 to +150
-65 to +150
Services:
Bonded Inventory
Custom Electrical Screening
Custom Electrical Characteristic Curves
SPICE Models
Custom Packaging
145 Adams Avenue
Weblink/Samples:
• Package Base Options
• Custom Device Development /
Multi Discrete Modules (MDM™)
• Bare Die for Hybrid Applications
For more information
or to request
samples visit:
www.centralsemi.com/info/LPMOSFETs
USA
Hauppauge
New York
11788
www.centralsemi.com

CEDM8001VLTR Related Products

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Description Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-883VL, 3 PIN Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-883VL, 3 PIN Small Signal Field-Effect Transistor, Small Signal Field-Effect Transistor, SOT-883VL, 3 PIN
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code compliant compliant compliant compliant
package instruction CHIP CARRIER, R-PBCC-N3 CHIP CARRIER, R-PBCC-N3 - SOT-883VL, 3 PIN
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