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SAC8.0E3

Description
Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size211KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

SAC8.0E3 Overview

Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

SAC8.0E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage8.89 V
Breakdown voltage nominal value8.8 V
Shell connectionISOLATED
Maximum clamping voltage13.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SAC5.0 thru SAC50, e3
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at
500 watts provides an added rectifier element as shown in Figure 4 to
achieve low capacitance in applications for higher speed data or signal
lines. The low capacitance rating of 30 pF may be used for protecting
higher frequency applications in inductive switching environments or
electrical systems involving secondary lightning effects per IEC61000-4-5
as well as RTCA/DO-160D or ARINC 429 for airborne avionics.
If
bidirectional protection is needed, two SAC devices in anti-parallel
configuration are required as shown in Figure 6. With their very fast
response time, they also provide ESD and EFT protection per IEC61000-4-
2 and IEC61000-4-4 respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
DO-41
WWW .
Microsemi
.C
OM
FEATURES
Unidirectional low-capacitance TVS series for
flexible thru-hole mounting (for bidirectional see
Figure 6)
Improved performance in low capacitance of 30 pF
Economical plastic series in flexible axial-leaded
DO-41 package
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for
o
o
added 100% temperature cycle -55 C to +125 C
(10X) as well as surge (3X) and 24 hours HTRB
with post test V
Z
& I
R
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are also
available by adding MQ, MX, or MV prefixes
respectively to part number, e.g. MXSAC5.0,
MVSAC18, etc.
Also available in surface mount with HSMBJ prefix
for part numbers (ex. HSMBJSAC5.0)
RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines up to Level 3
Waveform 4 and Level 1 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
SAC5.0 to SAC50
SAC5.0 to SAC45
SAC5.0 to SAC22
SAC5.0 to SAC10
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance
Class 1: SAC5.0 to SAC26
Class 2: SAC5.0 to SAC15
Class 3: SAC5.0 to SAC7.0
MAXIMUM RATINGS
Peak Pulse Power Dissipation at 25 C: 500 Watts @
10/1000
μs
with repetition rate of 0.01% or less*
o
Steady State Power Dissipation* at T
L
= +75 C: 2.5 Watts
(Lead Length = 3/8”).
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65 C to +150 C.
o
o
o
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting Plastic
epoxy meeting UL94V-0
TERMINATIONS: Tin-lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750
method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and cathode band
WEIGHT: 0.7 Grams (Approx.)
See package dimensions on last page
SAC5.0 thru SAC50, e3
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2007
6-20-2007 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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