FSPYE134R, FSPYE134F
Data Sheet
June 2001
File Number 5015
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
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Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
TM
Features
• 20A*, 150V, r
DS(ON)
= 0.088Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 2nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
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The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37.
Star*Power Gold FETs have been optimized for SEE and
Gate Charge providing SEE performance to 80% of the
rated voltage for an LET of 82 with extremely low gate
charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
*Current is limited by the package capability
Formerly available as type TA45214W.
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL PART NUMBER/BRAND
Engineering samples
TXV
Space
TXV
Space
FSPYE134D1
FSPYE134R3
FSPYE134R4
FSPYE134F3
FSPYE134F4
©2001 Fairchild Semiconductor Corporation
4-1
FSPYE134R, FSPYE134F Rev. A1
FSPYE134R, FSPYE134F
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPYE134R, FSPYE134F
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
75
30
0.60
45
20
80
-55 to 150
300
1.0 (Typical)
W
W
W/
o
C
A
A
A
o
C
o
C
UNITS
V
V
A
A
A
V
150
150
20 (Note)
13
80
±30
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
*Current is limited by the package capability
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
150
-
2.0
1.0
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 12V
75V < V
DD
<120V
I
D
= 20A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 20A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.077
-
-
-
-
-
30
10
8
45
3
6.5
1350
275
16
-
MAX
-
5.5
4.5
-
25
250
100
200
1.86
0.088
0.167
20
30
35
15
33
12
10
-
-
-
-
-
-
1.67
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 120V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 20A
I
D
= 13A,
V
GS
= 12V
Gate to Source Leakage Current
I
GSS
V
DS(ON)
r
DS(ON)12
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
©2001 Fairchild Semiconductor Corporation
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DD
= 75V, I
D
= 20A,
R
L
= 3.75Ω, V
GS
= 12V,
R
GS
= 7.5Ω
4-2
FSPYE134R, FSPYE134F Rev. A1
FSPYE134R, FSPYE134F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 20A
I
SD
= 20A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.3
MAX
1.2
210
-
UNITS
V
ns
µC
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 120V
V
GS
= 12V, I
D
= 20A
V
GS
= 12V, I
D
= 13A
MIN
150
2.0
-
-
-
-
MAX
-
4.5
100
25
1.86
0.088
MIN
150
1.5
MAX
-
4.5
100
50
2.30
0.105
UNITS
V
V
nA
µA
V
Ω
100K RAD
300K RAD
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
(Note 6)
TYPICAL LET
(MeV/mg/cm)
37
60
60
82
82
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL RANGE
(µ)
36
32
32
28
28
APPLIED
V
GS
BIAS
(V)
-10
-2
-8
0
-5
(Note 7)
MAXIMUM
V
DS
BIAS
(V)
150
150
120
120
90
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANG E = 36µ
LET = 60MeV/mg/cm
2
, RANG E = 32µ
LET = 82MeV/mg/cm
2
, RANG E = 28µ
FLUENCE = 1E 5 IONS/cm
2
(TYPICAL)
150
20 0
LE T = 37
16 0
V
DS
(V)
12 0
V
DS
80
50
40
TEMP = 25
o
C
0
0
0
-2
-4
-6
V
G S
(V)
-8
-10
-12
0
5
10
LET = 82
LET = 60
15
20
25
30
35
100
N E GAT IV E V
G S
B IA S (V )
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
FSPYE134R, FSPYE134F Rev. A1
4-3
FSPYE134R, FSPYE134F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
24
20
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
4
I
D
, DRAIN (A)
16
12
8
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-50
0
50
100
150
T
C
, CA SE TEMPER ATU RE (
o
C)
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
300
100
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
12V
Q
G
10
10 0µs
Q
GS
1ms
V
G
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
Q
GD
1
.1
.1
1
10
100
500
CHARGE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
I
D
, DRAIN-TO -SO URCE CURRE NT (A)
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 13A
NO R M A LIZED r
D S(O N )
2.0
70
V
GS
= 14 V
60
50
40
30
20
10
0
V
GS
= 12 V
V
GS
= 10 V
V
G S
= 8V
1.5
1.0
0.5
V
GS
= 6V
0
-80
-40
0
40
80
120
160
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
D S
, D R A IN -TO -S O U R C E V O LTA G E (V )
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
4-4
FSPYE134R, FSPYE134F Rev. A1
FSPYE134R, FSPYE134F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
10
1
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
200
I
AS
, AVA LA N C H E C U R R E N T (A )
100
STA RTIN G T
J
= 25
o
C
10
STA RTIN G T
J
= 150
o
C
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 R ATED BV
D SS
- V
D D
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R ) / (1.3 RATED BV
D SS
- V
DD
) + 1]
1
.001
.01
.1
1
10
t
AV
, TIM E IN AVA LA NC HE (m s)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
50Ω
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
©2001 Fairchild Semiconductor Corporation
4-5
FSPYE134R, FSPYE134F Rev. A1
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