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BYVB32-150-HE3/81

Description
DIODE 9 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size142KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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BYVB32-150-HE3/81 Overview

DIODE 9 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYVB32-150-HE3/81 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
2
BYV32 Series
PIN 1
PIN 3
PIN 2
CASE
3
1
BYVF32 Series
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
BYVB32 Series
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
18 A
50 V to 200 V
150 A
25 ns
0.85 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 125 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
BYV32-50
50
35
50
BYV32-100
100
70
100
18
150
- 65 to + 150
1500
BYV32-150
150
105
150
BYV32-200
200
140
200
UNIT
V
V
V
A
A
°C
V
Document Number: 88558
Revision: 05-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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