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HB56A19A-12

Description
DRAM Module, 1MX9, 120ns, CMOS, SIMM-30
Categorystorage    storage   
File Size202KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HB56A19A-12 Overview

DRAM Module, 1MX9, 120ns, CMOS, SIMM-30

HB56A19A-12 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeSIMM
package instruction, SIP30,.2
Contacts30
Reach Compliance Codeunknown
ECCN codeEAR99
access modePAGE
Maximum access time120 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XSMA-T30
JESD-609 codee0
memory density9437184 bit
Memory IC TypeDRAM MODULE
memory width9
Number of functions1
Number of ports1
Number of terminals30
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX9
Output characteristics3-STATE
Package body materialUNSPECIFIED
Encapsulate equivalent codeSIP30,.2
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height20.574 mm
Maximum standby current0.009 A
Maximum slew rate0.45 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

HB56A19A-12 Related Products

HB56A19A-12 HB56A19B-12 HB56A19A-10 HB56A19B-10 HB56A19A-15 HB56A19B-15
Description DRAM Module, 1MX9, 120ns, CMOS, SIMM-30 DRAM Module, 1MX9, 120ns, CMOS, SIMM-30 DRAM Module, 1MX9, 100ns, CMOS, SIMM-30 DRAM Module, 1MX9, 100ns, CMOS, SIMM-30 DRAM Module, 1MX9, 150ns, CMOS, SIMM-30 DRAM Module, 1MX9, 150ns, CMOS, SIMM-30
Maker Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas ) Hitachi (Renesas )
Parts packaging code SIMM SIMM SIMM SIMM SIMM SIMM
package instruction , SIP30,.2 SIMM, SIM30 , SIP30,.2 SIMM, SIM30 , SIP30,.2 SIMM, SIM30
Contacts 30 30 30 30 30 30
Reach Compliance Code unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode PAGE PAGE PAGE PAGE PAGE PAGE
Maximum access time 120 ns 120 ns 100 ns 100 ns 150 ns 150 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XSMA-T30 R-XSMA-N30 R-XSMA-T30 R-XSMA-N30 R-XSMA-T30 R-XSMA-N30
memory density 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bi
Memory IC Type DRAM MODULE DRAM MODULE DRAM MODULE DRAM MODULE DRAM MODULE DRAM MODULE
memory width 9 9 9 9 9 9
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 30 30 30 30 30 30
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX9 1MX9 1MX9 1MX9 1MX9 1MX9
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Encapsulate equivalent code SIP30,.2 SIM30 SIP30,.2 SIM30 SIP30,.2 SIM30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 1024 1024 1024 1024 1024 1024
Maximum seat height 20.574 mm 20.447 mm 20.574 mm 20.447 mm 20.574 mm 20.447 mm
Maximum standby current 0.009 A 0.009 A 0.009 A 0.009 A 0.009 A 0.009 A
Maximum slew rate 0.45 mA 0.45 mA 0.54 mA 0.54 mA 0.36 mA 0.36 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form THROUGH-HOLE NO LEAD THROUGH-HOLE NO LEAD THROUGH-HOLE NO LEAD
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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